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Kim, Je-Hyung
Solid-State Quantum Architecture Lab.
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Integrated single photon source of InAs quantum dot with silicon-based photonic circuits

Ko, Young-HoHan, Won SeokKim, Kap-JoongChoi, Byung-SeoklKim, Kyu YoungKim, Je-HyungYoun, Chun JuKim, Jong-HoiJu, Jung Jin
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2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
A single photon source is an essential element for the photonic quantum information applications including the quantum communication, the quantum simulation, and the quantum computation [1,2]. Semiconductor quantum dots (QDs) have been widely considered as a promising platform for the single photon source due to their various advantages of manipulation and integration with various photonic elements. To realize the on-chip quantum devices, there have been numerous effort to integrate III-V QDs with silicon-based photonic circuits [3,4]. However the self-assembled QDs have inherent drawbacks of irregular size distribution and random position. To overcome these drawbacks, various methods have been studied to obtain the site-controlled QDs such as the pyramid, the inverted pyramid, the nanohole, and the spatially selective H incorporation techniques [5]. In this study, we obtained site-controlled InAs QDs by the selective-area growth (SAG) method and integrated single photon source with the silicon-based photonic circuits through the micro-transfer technique.
Institute of Electrical and Electronics Engineers Inc.


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