Single-electron transistors with sidewall depletion gates on a silicon-on-insulator nano-wire

Abstract

Novel single-electron transistors with sidewall depletion gates on a silicon-on-insulator nano-wire have been fabricated by the conventional very large-scale integration technologies. The fabricated SETs show the controllable characteristics, which can be estimated from the device geometry. The electrically induced quantum dot is well defined in the intended spot and the fabricated SETs show reliable single-dot characteristics eliminating unintentionally formed potential barriers in a silicon-oninsulator nano-wire. Also, it shows multiple Coulomb oscillation peaks with a constant period, overcoming the drawbacks of the previously reported SETs based on electrically induced quantum dot. The Coulomb oscillation phase control and voltage gain larger than unity are the promising properties of our devices for practical circuit application.