dc.citation.endPage |
529 |
- |
dc.citation.number |
11 |
- |
dc.citation.startPage |
527 |
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dc.citation.title |
ELECTRONICS LETTERS |
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dc.citation.volume |
38 |
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dc.contributor.author |
Kim, DH |
- |
dc.contributor.author |
Kim, Kyung Rok |
- |
dc.contributor.author |
Sung, SK |
- |
dc.contributor.author |
Lee, JD |
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dc.contributor.author |
Park, BG |
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dc.date.accessioned |
2023-12-22T11:38:19Z |
- |
dc.date.available |
2023-12-22T11:38:19Z |
- |
dc.date.created |
2014-10-27 |
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dc.date.issued |
2002-05 |
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dc.description.abstract |
Basic operation of a dynamic exclusive-OR gate implemented by field effect transistor and a single-electron transistor is experimentally demonstrated, for the first time. Logic output voltage shows full swing operation at a supply voltage of 20 mV. Fabricated single-electron transistors are advantageous for implementing a multi-gate single-electron logic circuit. |
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dc.identifier.bibliographicCitation |
ELECTRONICS LETTERS, v.38, no.11, pp.527 - 529 |
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dc.identifier.doi |
10.1049/el:20020345 |
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dc.identifier.issn |
0013-5194 |
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dc.identifier.scopusid |
2-s2.0-0037161687 |
- |
dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/7940 |
- |
dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0037161687 |
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dc.identifier.wosid |
000176041900023 |
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dc.language |
영어 |
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dc.publisher |
INST ENGINEERING TECHNOLOGY-IET |
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dc.title |
Dynamic exclusive-OR gate based on gate-induced Si island single-electron transistor |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scopus |
- |