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Kim, Kyung Rok
Nano-Electronic Emerging Devices Lab.
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dc.citation.endPage 529 -
dc.citation.number 11 -
dc.citation.startPage 527 -
dc.citation.title ELECTRONICS LETTERS -
dc.citation.volume 38 -
dc.contributor.author Kim, DH -
dc.contributor.author Kim, Kyung Rok -
dc.contributor.author Sung, SK -
dc.contributor.author Lee, JD -
dc.contributor.author Park, BG -
dc.date.accessioned 2023-12-22T11:38:19Z -
dc.date.available 2023-12-22T11:38:19Z -
dc.date.created 2014-10-27 -
dc.date.issued 2002-05 -
dc.description.abstract Basic operation of a dynamic exclusive-OR gate implemented by field effect transistor and a single-electron transistor is experimentally demonstrated, for the first time. Logic output voltage shows full swing operation at a supply voltage of 20 mV. Fabricated single-electron transistors are advantageous for implementing a multi-gate single-electron logic circuit. -
dc.identifier.bibliographicCitation ELECTRONICS LETTERS, v.38, no.11, pp.527 - 529 -
dc.identifier.doi 10.1049/el:20020345 -
dc.identifier.issn 0013-5194 -
dc.identifier.scopusid 2-s2.0-0037161687 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/7940 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0037161687 -
dc.identifier.wosid 000176041900023 -
dc.language 영어 -
dc.publisher INST ENGINEERING TECHNOLOGY-IET -
dc.title Dynamic exclusive-OR gate based on gate-induced Si island single-electron transistor -
dc.type Article -
dc.description.journalRegisteredClass scopus -

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