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DC Field | Value | Language |
---|---|---|
dc.citation.conferencePlace | US | - |
dc.citation.conferencePlace | San Francisco | - |
dc.citation.title | IEEE International Electron Devices Meeting | - |
dc.contributor.author | Kim, Myungsoo | - |
dc.contributor.author | Pallecchi, E. | - |
dc.contributor.author | Ge, R. | - |
dc.contributor.author | Wu, X. | - |
dc.contributor.author | Avramovic, V. | - |
dc.contributor.author | Okada, E. | - |
dc.contributor.author | Lee, J.C. | - |
dc.contributor.author | Happy, H. | - |
dc.contributor.author | Akinwande, D. | - |
dc.date.accessioned | 2024-01-31T23:09:50Z | - |
dc.date.available | 2024-01-31T23:09:50Z | - |
dc.date.created | 2021-09-07 | - |
dc.date.issued | 2019-12 | - |
dc.description.abstract | Non-volatile radio-frequency (RF) switches based on hexagonal boron nitride (hBN) are realized for the first time with low insertion loss (≤ 0.2 dB) and high isolation (≥ 15 dB) up to 110 GHz. Crystalline hBN enables the thinnest RF switch device with a single monolayer (~0.33 nm) as the memory layer owing to its robust layered structure. It affords ~20 dBm power handling, 10 dB higher compared to MoS2 switches due to its wider bandgap (~6 eV). Importantly, operating frequencies cover the RF, 5G, and mm-wave bands, making this a promising low-power switch for diverse communication and connectivity front-end systems. Compared to other switch technologies based on MEMS, memristor, and phase-change memory (PCM), hBN switches offer a promising combination of non-volatility, nanosecond switching, power handling, high figure-of-merit cutoff frequency (43 THz), and heater-less ambient integration. Our pioneering work suggests that atomically-thin nanomaterials can be good device candidates for 5G and beyond. | - |
dc.identifier.bibliographicCitation | IEEE International Electron Devices Meeting | - |
dc.identifier.doi | 10.1109/IEDM19573.2019.8993470 | - |
dc.identifier.issn | 0163-1918 | - |
dc.identifier.scopusid | 2-s2.0-85081063399 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/78739 | - |
dc.language | 영어 | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Non-volatile RF and mm-wave Switches Based on Monolayer hBN | - |
dc.type | Conference Paper | - |
dc.date.conferenceDate | 2019-12-07 | - |
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