There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 3814 | - |
dc.citation.number | 23 | - |
dc.citation.startPage | 3812 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 79 | - |
dc.contributor.author | Kim, DH | - |
dc.contributor.author | Sung, SK | - |
dc.contributor.author | Sim, JS | - |
dc.contributor.author | Kim, Kyung Rok | - |
dc.contributor.author | Lee, JD | - |
dc.contributor.author | Park, BG | - |
dc.contributor.author | Choi, BH | - |
dc.contributor.author | Hwang, SW | - |
dc.contributor.author | Ahn, D | - |
dc.date.accessioned | 2023-12-22T11:41:07Z | - |
dc.date.available | 2023-12-22T11:41:07Z | - |
dc.date.created | 2014-10-27 | - |
dc.date.issued | 2001-12 | - |
dc.description.abstract | We propose and implement a promising fabrication technology for geometrically well-defined single-electron transistors based on a silicon-on-insulator quantum wire and side-wall depletion gates. The 30-nm-wide silicon quantum wire is defined by a combination of conventional photolithography and process technology, called a side-wall patterning method, and depletion gates for two tunnel junctions are formed by the doped polycrystalline silicon sidewall. The good uniformity of the wire suppresses unexpected potential barriers. The fabricated device shows clear single-electron tunneling phenomena by an electrostatically defined single island at liquid nitrogen temperature and insensitivity of the Coulomb oscillation period to gate bias conditions. | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.79, no.23, pp.3812 - 3814 | - |
dc.identifier.doi | 10.1063/1.1421081 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.scopusid | 2-s2.0-0035803208 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/7861 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0035803208 | - |
dc.identifier.wosid | 000172362500022 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Single-electron transistor based on a silicon-on-insulator quantum wire fabricated by a side-wall patterning method | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.