dc.citation.endPage |
3180 |
- |
dc.citation.number |
16 |
- |
dc.citation.startPage |
3178 |
- |
dc.citation.title |
APPLIED PHYSICS LETTERS |
- |
dc.citation.volume |
84 |
- |
dc.contributor.author |
Kim, Kyung Rok |
- |
dc.contributor.author |
Kim, DH |
- |
dc.contributor.author |
Lee, JD |
- |
dc.contributor.author |
Park, BG |
- |
dc.date.accessioned |
2023-12-22T11:06:41Z |
- |
dc.date.available |
2023-12-22T11:06:41Z |
- |
dc.date.created |
2014-10-28 |
- |
dc.date.issued |
2004-04 |
- |
dc.description.abstract |
The Coulomb oscillations based on band-to-band tunneling through a valence band in silicon metal-oxide-semiconductor field-effect-transistors were discussed. It was found that the formation of tunnel barries and a quantum dot in a single-electron transistor structure originated from two p+ - p+ tunnel junctions and a p+ -doped channel with mesoscopic dimension, respectively. At liquid nitrogen temperature, the Coulomb-blockade oscillations with multiple peaks were also observed. Analysis shows that the single-electron charging effect based on band-to-band tunneling was confirmed using the electrical and thermal characterization of the quantum dots. |
- |
dc.identifier.bibliographicCitation |
APPLIED PHYSICS LETTERS, v.84, no.16, pp.3178 - 3180 |
- |
dc.identifier.doi |
10.1063/1.1707217 |
- |
dc.identifier.issn |
0003-6951 |
- |
dc.identifier.scopusid |
2-s2.0-2442453272 |
- |
dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/7858 |
- |
dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=2442453272 |
- |
dc.identifier.wosid |
000220975800070 |
- |
dc.language |
영어 |
- |
dc.publisher |
AMER INST PHYSICS |
- |
dc.title |
Coulomb oscillations based on band-to-band tunneling in a degenerately doped silicon metal-oxide-semiconductor field-effect transistor |
- |
dc.type |
Article |
- |
dc.description.journalRegisteredClass |
scopus |
- |