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김주영

Kim, Ju-Young
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dc.citation.conferencePlace US -
dc.citation.conferencePlace California, USA -
dc.citation.title 2020 TMS (149th annual meeting & exhibition) -
dc.contributor.author Kim, Na-Hyang -
dc.contributor.author Kim, Hangeul -
dc.contributor.author Kim, Ju-Young -
dc.date.accessioned 2024-01-31T23:07:30Z -
dc.date.available 2024-01-31T23:07:30Z -
dc.date.created 2020-04-09 -
dc.date.issued 2020-02-25 -
dc.description.abstract In long-term stability, however, most of these organic devices are vulnerable to moisture, oxygen,etc. To prevent the moisture in the air, highly dense film is required as a barrier. In this research, we studied thermally grown SiO2 film as an encapsulation film as we expected thermally grown silicon dioxide film to have ultra-low water permeability and high elasticity due to its rare defects, high density and high uniformity. We increased elastic deformation limit of thermally grown silicon dioxide film to apply on stretchable devices. To increase elastic deformation limit, the thickness of thermally grown SiO2 films were decreased to observe thickness effect. Although thick SiO2 films show very short elastic deformation limit around 0.7%, thinner SiO2 films have smaller size and number of defects, and these features are characterized as high elastic deformation limit. Tensile tests were performed on those films to discuss thickness-dependent on elastic deformation limit. -
dc.identifier.bibliographicCitation 2020 TMS (149th annual meeting & exhibition) -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/78568 -
dc.language 영어 -
dc.publisher TMS -
dc.title Thickness-dependent elastic deformation limit of thermally-grown SiO2 thin films -
dc.type Conference Paper -
dc.date.conferenceDate 2020-02-23 -

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