Switchable bias-field effect in large tensile strained BaTiO3 epitaxy film on lab-made BaZrO3 substrate

Abstract

Strain engineering for the heteroepitaxy film is a technique to apply strain on the oxide film through the lattice mismatch between the film and substrate[1]. The applied strain often leads to enhancement of their physical properties or sometimes creates new physical phenomena. Magnitude and symmetry of the applied strain strongly depend on the chosen substrate. However, the prevalent perovskite substrates have been limited in the well-known perovskite oxides system, such as SrTiO3, scadates, aluminates, etc. Recently, we have developed a new perovskite oxide substrate BaZrO3 and successfully grown BaTiO3 film on the lab-made BaZrO3 substrate. In this presentation, we introduce and discuss emerging physical phenomena in the epitaxial BaTiO3 film on the BaZrO3 single crystal substrate.

[1] R. Ramesh and D. G. Schlom, Nature Reviews Materials 4, 257 (2019)