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Choi, Kyoung Jin
Energy Conversion Materials (EcoMAT) Lab
Research Interests
  • Solar cells, thermoelectrics, piezoelectric

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3.3V supply single-voltage-operating double-planar-doped AlGaAs/InGaAs PHEMT with double channel for 1.6GHz digital mobile communications

DC Field Value Language
dc.contributor.author Lee, JL -
dc.contributor.author Kim, JK -
dc.contributor.author Choi, Kyoung Jin -
dc.contributor.author Yoo, HM -
dc.date.accessioned 2014-10-24T00:11:13Z -
dc.date.available 2014-10-24T00:11:13Z -
dc.date.created 2014-10-22 -
dc.date.issued 2000-02 -
dc.identifier.citation ELECTRONICS LETTERS, v.36, no.3, pp.262 - 264 -
dc.identifier.issn 0013-5194 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/7709 -
dc.description.abstract A 3.3V supply single-voltage AlGaAs/InGaAs PHEMT with double channels has been developed for CDMA handsets for global mobile personal communication systems. The PHEMT has an output power of 24.2dBm (75.2mW/mm output power density), 37% power-added efficiency. and a third-order intermodulation distortion Im el of -30.7dBc under single-voltage operation with a 3.3V drain voltage and 1.6GHz frequency. The power density is the highest among those reported for poser devices operating at a single voltage. The good performance is obtained by incorporating an AlGaAs/GaAs quantum well channel between the gate and the InGaAs channel. -
dc.description.statementofresponsibility open -
dc.language ENG -
dc.publisher INST ENGINEERING TECHNOLOGY-IET -
dc.subject TRANSISTOR -
dc.title 3.3V supply single-voltage-operating double-planar-doped AlGaAs/InGaAs PHEMT with double channel for 1.6GHz digital mobile communications -
dc.type ARTICLE -
dc.identifier.scopusid 2-s2.0-0034598666 -
dc.identifier.wosid 000085671400046 -
dc.type.rims ART -
dc.description.wostc 2 *
dc.description.scopustc 2 *
dc.date.tcdate 2015-05-06 *
dc.date.scptcdate 2014-10-22 *
dc.identifier.doi 10.1049/el:20000228 -
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