dc.citation.endPage |
264 |
- |
dc.citation.number |
3 |
- |
dc.citation.startPage |
262 |
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dc.citation.title |
ELECTRONICS LETTERS |
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dc.citation.volume |
36 |
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dc.contributor.author |
Lee, JL |
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dc.contributor.author |
Kim, JK |
- |
dc.contributor.author |
Choi, Kyoung Jin |
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dc.contributor.author |
Yoo, HM |
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dc.date.accessioned |
2023-12-22T12:08:31Z |
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dc.date.available |
2023-12-22T12:08:31Z |
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dc.date.created |
2014-10-22 |
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dc.date.issued |
2000-02 |
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dc.description.abstract |
A 3.3V supply single-voltage AlGaAs/InGaAs PHEMT with double channels has been developed for CDMA handsets for global mobile personal communication systems. The PHEMT has an output power of 24.2dBm (75.2mW/mm output power density), 37% power-added efficiency. and a third-order intermodulation distortion Im el of -30.7dBc under single-voltage operation with a 3.3V drain voltage and 1.6GHz frequency. The power density is the highest among those reported for poser devices operating at a single voltage. The good performance is obtained by incorporating an AlGaAs/GaAs quantum well channel between the gate and the InGaAs channel. |
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dc.identifier.bibliographicCitation |
ELECTRONICS LETTERS, v.36, no.3, pp.262 - 264 |
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dc.identifier.doi |
10.1049/el:20000228 |
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dc.identifier.issn |
0013-5194 |
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dc.identifier.scopusid |
2-s2.0-0034598666 |
- |
dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/7709 |
- |
dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=0034598666 |
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dc.identifier.wosid |
000085671400046 |
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dc.language |
영어 |
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dc.publisher |
INST ENGINEERING TECHNOLOGY-IET |
- |
dc.title |
3.3V supply single-voltage-operating double-planar-doped AlGaAs/InGaAs PHEMT with double channel for 1.6GHz digital mobile communications |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scopus |
- |