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Kim, Ju-Young
Robust Multifunctional Materials Lab
Research Interests
  • Flexible / stretchable devices, nano-mechanics, nanoporous metal, materials reliability

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Effect of substrate temperature on structure and intrinsic stress in vapor-deposited amorphous silicon carbide film

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dc.contributor.author Kim, Ju-Young ko
dc.contributor.author Lee, BW ko
dc.contributor.author Nam, HS ko
dc.contributor.author Kwon, D ko
dc.date.available 2014-10-24T00:10:47Z -
dc.date.created 2014-10-23 ko
dc.date.issued 2004-11 -
dc.identifier.citation THIN SOLID FILMS, v.467, no.1-2, pp.294 - 299 ko
dc.identifier.issn 0040-6090 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/7679 -
dc.identifier.uri http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=4444307302 ko
dc.description.abstract Amorphous silicon carbide (a-SiC) films were deposited on crystalline silicon substrates using molecular dynamics (MD) simulation. MD simulations for various substrate temperatures were performed to consider the effect of substrate temperature on structure and intrinsic stress in vapor-deposited a-SiC films. Chemical order in the a-SiC film was increased by annealing effect as the substrate temperature increased, and consequently, the high chemical-ordered a-SiC film had high-density and low-tensile intrinsic stress. The chemical ordering during cooling was analyzed with radial distribution functions. The profiles of intrinsic stress along the z axis were obtained, and the changes in stress distribution around the interface with substrate temperature were examined. ko
dc.description.statementofresponsibility close -
dc.language ENG ko
dc.publisher ELSEVIER SCIENCE SA ko
dc.subject Amorphous materials ko
dc.subject Molecular dynamics simulation ko
dc.subject Silicon carbide ko
dc.title Effect of substrate temperature on structure and intrinsic stress in vapor-deposited amorphous silicon carbide film ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-4444307302 ko
dc.identifier.wosid 000224185100048 ko
dc.type.rims ART ko
dc.description.wostc 2 *
dc.description.scopustc 2 *
dc.date.tcdate 2015-05-06 *
dc.date.scptcdate 2014-10-23 *
dc.identifier.doi 10.1016/j.tsf.2004.04.030 ko
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