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Song, Myoung Hoon
Organic Photonics & Optoelectronics Lab
Research Interests
  • Organic optoelectrics, perovskite light-emitting diodes, surface treatment, photonic crystals

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Integration of a Rib Waveguide Distributed Feedback Structure into a Light-Emitting Polymer Field-Effect Transistor

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dc.contributor.author Gwinner, Michael C. ko
dc.contributor.author Khodabakhsh, Saghar ko
dc.contributor.author Song, Myoung Hoon ko
dc.contributor.author Schweizer, Heinz ko
dc.contributor.author Giessen, Harold ko
dc.contributor.author Sirringhaus, Henning ko
dc.date.available 2014-10-20T08:49:46Z -
dc.date.created 2014-10-20 ko
dc.date.issued 2009-05 -
dc.identifier.citation ADVANCED FUNCTIONAL MATERIALS, v.19, no.9, pp.1360 - 1370 ko
dc.identifier.issn 1616-301X ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/7433 -
dc.identifier.uri https://onlinelibrary.wiley.com/doi/abs/10.1002/adfm.200801897 ko
dc.description.abstract Ambipolar light-emitting organic field-effect transistors (LEFETs) possess the ability to efficiently emit light due to charge recombination in the channel. Since the emission can be made to occur far from the metal electrodes, the LEFET structure has been proposed as a potential architecture for electrically pumped organic lasers. Here, a rib waveguide distributed feedback structure consisting of tantalum pentoxide (Ta2O5) integrated within the channel of a top gate/bottom contact LEFET based on poly(9,9-dioctylfluorene-altbenzothiadiazole) (F8BT) is demonstrated. The emitted light is coupled efficiently into the resonant mode of the DFB waveguide when the recombination zone of the LEFET is placed directly above the waveguide ridge. This architecture provides strong mode confinement in two dimensions. Mode simulations are used to optimize the dielectric thickness and gate electrode material. It is shown that electrode absorption losses within the device can be eliminated and that the lasing threshold for optical pumping of the LEFET structure with all electrodes (4.5 μJ cm-2) is as low as that of reference devices without electrodes. These results enable quantitative judgement of the prospects for realizing an electrically pumped organic laser based on ambipolar LEFETs. The proposed device provides a powerful, lowloss architecture for integrating high-performance ambipolar organic semiconductor materials into electrically pumped lasing structures. ko
dc.description.statementofresponsibility close -
dc.language ENG ko
dc.publisher WILEY-V C H VERLAG GMBH ko
dc.subject Absorption loss ko
dc.subject Ambipolar ko
dc.subject Charge recombinations ko
dc.subject Dielectric thickness ko
dc.subject Distributed feedback structure ko
dc.subject Electrically pumped ko
dc.subject Emitted light ko
dc.subject Gate electrode materials ko
dc.subject Lasing threshold ko
dc.subject Light emitting polymer ko
dc.subject Low loss ko
dc.subject Metal electrodes ko
dc.subject Mode simulation ko
dc.subject Organic field-effect transistors ko
dc.subject Organic laser ko
dc.subject Recombination zones ko
dc.subject Reference devices ko
dc.subject Resonant mode ko
dc.subject Rib waveguides ko
dc.subject Tantalum pentoxide ko
dc.subject Two-dimension ko
dc.title Integration of a Rib Waveguide Distributed Feedback Structure into a Light-Emitting Polymer Field-Effect Transistor ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-66149154263 ko
dc.identifier.wosid 000266285400005 ko
dc.type.rims ART ko
dc.description.wostc 49 *
dc.description.scopustc 38 *
dc.date.tcdate 2015-05-06 *
dc.date.scptcdate 2014-10-20 *
dc.identifier.doi 10.1002/adfm.200801897 ko
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