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Baik, Jeong Min
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dc.citation.endPage 533 -
dc.citation.number 2 -
dc.citation.startPage 530 -
dc.citation.title JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B -
dc.citation.volume 23 -
dc.contributor.author Baik, Jeong Min -
dc.contributor.author Lee, JL -
dc.date.accessioned 2023-12-22T10:37:51Z -
dc.date.available 2023-12-22T10:37:51Z -
dc.date.created 2014-10-17 -
dc.date.issued 2005-03 -
dc.description.abstract Ferromagnetic (Ga,Mn)N nanowires were grown on sapphire substrates at 900 degrees C by a chemical vapor deposition. Synchrotron radiation photoemission spectroscopy revealed that no secondary phases were found in the grown nanowire, meaning the dissolution of Mn atoms to form a solid solution in GaN nanowire. Fermi level was apart by 3.0,eV in the GaN nanowire (n-type), and it shifted toward the valance band maximum with ammonia flow rate. The Ga-to-N ratio decreased with the increase of ammonia flow rate, leading to the increase of Ga vacancies. From this, it is suggested that both increases in magnetic moment and Curie temperature with ammonia flow rate originated from the solid solution of Mn and Ga vacancies. -
dc.identifier.bibliographicCitation JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.23, no.2, pp.530 - 533 -
dc.identifier.doi 10.1116/1.1880212 -
dc.identifier.issn 1071-1023 -
dc.identifier.scopusid 2-s2.0-30944463328 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/7402 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=30944463328 -
dc.identifier.wosid 000228788600031 -
dc.language 영어 -
dc.publisher A V S AMER INST PHYSICS -
dc.title Ferromagnetic properties of (Ga,Mn)N nanowires grown by a chemical vapor deposition method -
dc.type Article -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus MOLECULAR-BEAM EPITAXY -
dc.subject.keywordPlus MAGNETIC SEMICONDUCTORS -
dc.subject.keywordPlus ROOM-TEMPERATURE -
dc.subject.keywordPlus OPTICAL-PROPERTIES -
dc.subject.keywordPlus GAN -
dc.subject.keywordPlus MG -

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