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Lim, Hyunseob
School of Natural Science
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Stacking of Two-Dimensional Materials in Lateral and Vertical Directions

DC Field Value Language Lim, Hyunseob ko Yoon, Seong In ko Kim, Gwangwoo ko Jang, A-Rang ko Shin, Hyeon Suk ko 2014-10-17T08:37:55Z - 2014-10-17 ko 2014-09 ko
dc.identifier.citation CHEMISTRY OF MATERIALS, v.26, no.17, pp.4891 - 4903 ko
dc.identifier.issn 0897-4756 ko
dc.identifier.uri -
dc.description.abstract Along With the explosive interest in graphene research, much attention has been paid to other two-dimensional (2D) materials such as transition Metal dithalcogenides (TMDs) and hexagonal boron nitride (h-BN). In particular the stacking of various 2D materials in the vertical and lateral directions has been studied recently, as novel physicochemical properties are expected that could result in new applications for electronic devices In this Perspective, recent advances in the stacking of 2D materials are discussed from the point of view of materials chemistry. In particular, methods for stacking of 2D materials (h-BN/graphene, graphene/WS2 (or MoS2)/graphene, etc.), the properties of vertically and laterally stacked 2D materials, and possible applications are discussed. Finally, we discuss important emerging issues to be studied in future. ko
dc.description.statementofresponsibility close -
dc.language 영어 ko
dc.publisher AMER CHEMICAL SOC ko
dc.title Stacking of Two-Dimensional Materials in Lateral and Vertical Directions ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-84907993360 ko
dc.identifier.wosid 000341543200002 ko
dc.type.rims ART ko
dc.description.wostc 4 * 2015-05-06 *
dc.identifier.doi 10.1021/cm502170q ko
dc.identifier.url ko
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