Carrier Transport of Edge Tunnel Junction and its Applications

Abstract

The theory of interface structure from charge carrier transport has been influenced by the electrostatic condition at the nanometer-sized Metal/Insulator/Ferroelectric/Metal (M/I/F/M) and Metal/Semiconductor/Metal (M/S/M) junctions. Therefore, we have conducted calculations and achieved experimental results from this theory with our own device structure. We have achieved calculation results of carrier transport from finite element electrostatic modeling. In addition, we expected the electrostatic energy band profile to change by polarization direction. Our device structure is controlled from a nanometer-sized aperture structure with controlled shape and width. The result of carrier transport is measured by current-voltage (IV), and hysteresis curve from a manufactured nanometer gap M/F/I/M structure. The hysteresis loop (Polarization-Electric Field) is changed by polarization direction from oxide thickness with applied fields. By checking the availability result and continuously researching the THz detector and switch memory, we can expect to blaze a trail in non-destructive random access memory. Due to the carrier transport theory, we expected the tunneling effect near the metal electrodes. Here, we have another advantage from the device design from the Metal/Semiconductor/Metal (MSM) junction. We have a predictable response result from the carrier transport through the SiC junction layer by edge MSM with or without applied bias or a circuit system. There are two kinds of THz electric wave beam power: 0.2THz and 0.4THz. Our new constitution in the surface barrier-type broadband THz detector can actually decrease the size of the diode, build up just two photolithography steps, and control for the depth of the metal and semiconductor layer. The calculated the responsively results were 11.2V/W on 0.2THz electric wave power and 18V/W on the 0.4THz beam power source irradiation. Our detection diode is an independent structure, so more research combined with a qualification antenna, an optimal circuit with resistor and capacitor, and condenser lenses will create a great ripple effect from this detector system. Finally, the capacitive-type touch screen panel (TSP) composed of silver nanowire (AgNW) crossing electrodes and a transparent bridge structure was fabricated on a polycarbonate film. The transparent bridge structure was formed with a stack of Al-doped ZnO (AZO) electrodes and an SU-8 insulator. The stable and robust continuity of the bridge electrode over the bridge insulator was achieved by making the side-wall slope of the bridge insulator low and depositing the conformal AZO film with atomic layer deposition. With an extended exposure time of photolithography, the lower part of the SU-8 layer around the region uncovered by the photomask can be sufficiently exposed to the UV light scattered from the substrate. This leads to the low side-wall slope of the bridge insulator. The fabricated TSP sample showed a large capacitance change of 22.71% between with and without touching. Our work supplies a technological clue for ensuring the long-term reliability of a highly flexible and transparent TSP made by conventional fabrication processes.