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이상영

Lee, Sang-Young
Energy Soft-Materials Lab.
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dc.contributor.assignee 울산과학기술원 -
dc.contributor.author 이상영 -
dc.contributor.author 조석규 -
dc.contributor.author 양창덕 -
dc.contributor.author 강소희 -
dc.contributor.author 이지은 -
dc.contributor.author 이승호 -
dc.contributor.author 곽상규 -
dc.contributor.author 이경민 -
dc.contributor.author 고은민 -
dc.contributor.author 유자형 -
dc.date.accessioned 2024-01-23T18:35:46Z -
dc.date.application 2019-09-27 -
dc.date.available 2024-01-23T18:35:46Z -
dc.date.registration 2021-07-13 -
dc.identifier.patentApplicationNumber 10-2019-0119942 -
dc.identifier.patentRegistrationNumber 10-2279178 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/69766 -
dc.title 핵산 기반 고체상 단이온 전도체의 제조 방법 및 포텐셜 에너지 표면 제어 방법 -
dc.type Patent -
dc.publisher.country KO -
dc.type.iprs 특허 -

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