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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 22 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 18 | - |
dc.citation.title | POLYMER JOURNAL | - |
dc.citation.volume | 36 | - |
dc.contributor.author | Kim, JB | - |
dc.contributor.author | Jang, Ji-Hyun | - |
dc.contributor.author | Ko, JS | - |
dc.contributor.author | Choi, JH | - |
dc.contributor.author | Lee, BW | - |
dc.date.accessioned | 2023-12-22T11:07:45Z | - |
dc.date.available | 2023-12-22T11:07:45Z | - |
dc.date.created | 2014-09-29 | - |
dc.date.issued | 2004 | - |
dc.description.abstract | Norbornene copolymers having derivatives of lithocholic acid were synthesized as matrix polymers for 193-nm lithography. Norbornene with a succinic acid ester group was introduced into the matrix polymers in order to improve adhesion to a silicon substrate without causing cross-linking during the post-exposure bake process. Dry-etching resistances of the polymers to CF4-reactive ion etching are comparable to that of poly(4-hydroxystyrene), a typical matrix resin for 248-nm lithography. The resists formulated with the polymers gave 0.15 μm line and space patterns at a dose of 14 mJ/cm2 using an ArF excimer laser stepper and a standard 2.38 wt% tetramethylammonium hydroxide aqueous solution. | - |
dc.identifier.bibliographicCitation | POLYMER JOURNAL, v.36, no.1, pp.18 - 22 | - |
dc.identifier.doi | 10.1295/polymj.36.18 | - |
dc.identifier.issn | 0032-3896 | - |
dc.identifier.scopusid | 2-s2.0-1542646976 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/6769 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=1542646976 | - |
dc.identifier.wosid | 000220006000003 | - |
dc.language | 영어 | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Adhesion enhancement of norbornene polymers with lithocholate substituents for 193-nm resists | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
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