dc.citation.endPage |
22 |
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dc.citation.number |
1 |
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dc.citation.startPage |
18 |
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dc.citation.title |
POLYMER JOURNAL |
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dc.citation.volume |
36 |
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dc.contributor.author |
Kim, JB |
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dc.contributor.author |
Jang, Ji-Hyun |
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dc.contributor.author |
Ko, JS |
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dc.contributor.author |
Choi, JH |
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dc.contributor.author |
Lee, BW |
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dc.date.accessioned |
2023-12-22T11:07:45Z |
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dc.date.available |
2023-12-22T11:07:45Z |
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dc.date.created |
2014-09-29 |
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dc.date.issued |
2004 |
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dc.description.abstract |
Norbornene copolymers having derivatives of lithocholic acid were synthesized as matrix polymers for 193-nm lithography. Norbornene with a succinic acid ester group was introduced into the matrix polymers in order to improve adhesion to a silicon substrate without causing cross-linking during the post-exposure bake process. Dry-etching resistances of the polymers to CF4-reactive ion etching are comparable to that of poly(4-hydroxystyrene), a typical matrix resin for 248-nm lithography. The resists formulated with the polymers gave 0.15 μm line and space patterns at a dose of 14 mJ/cm2 using an ArF excimer laser stepper and a standard 2.38 wt% tetramethylammonium hydroxide aqueous solution. |
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dc.identifier.bibliographicCitation |
POLYMER JOURNAL, v.36, no.1, pp.18 - 22 |
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dc.identifier.doi |
10.1295/polymj.36.18 |
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dc.identifier.issn |
0032-3896 |
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dc.identifier.scopusid |
2-s2.0-1542646976 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/6769 |
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dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=1542646976 |
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dc.identifier.wosid |
000220006000003 |
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dc.language |
영어 |
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dc.publisher |
NATURE PUBLISHING GROUP |
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dc.title |
Adhesion enhancement of norbornene polymers with lithocholate substituents for 193-nm resists |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scopus |
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