Full metadata record
DC Field | Value | Language |
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dc.citation.number | 45 | - |
dc.citation.startPage | eadj827 | - |
dc.citation.title | SCIENCE ADVANCES | - |
dc.citation.volume | 9 | - |
dc.contributor.author | Yoon, Jong Il | - |
dc.contributor.author | Kim, Hyoin | - |
dc.contributor.author | Kim, Meeree | - |
dc.contributor.author | Cho, Hwichan | - |
dc.contributor.author | Kwon, Yonghyun Albert | - |
dc.contributor.author | Choi, Mahnmin | - |
dc.contributor.author | Park, Seongmin | - |
dc.contributor.author | Kim, Taewan | - |
dc.contributor.author | Lee, Seunghan | - |
dc.contributor.author | Jo, Hyunwoo | - |
dc.contributor.author | Kim, BongSoo | - |
dc.contributor.author | Cho, Jeong Ho | - |
dc.contributor.author | Park, Ji-Sang | - |
dc.contributor.author | Jeong, Sohee | - |
dc.contributor.author | Kang, Moon Sung | - |
dc.date.accessioned | 2023-12-28T16:05:10Z | - |
dc.date.available | 2023-12-28T16:05:10Z | - |
dc.date.created | 2023-12-28 | - |
dc.date.issued | 2023-11 | - |
dc.description.abstract | InAs semiconductor nanocrystals (NCs) exhibit intriguing electrical/optoelectronic properties suitable for next-generation electronic devices. Although there is a need for both n- and p-type semiconductors in such devices, InAs NCs typically exhibit only n-type characteristics. Here, we report InAs NCs with controlled semiconductor polarity. Both p- and n-type InAs NCs can be achieved from the same indium chloride and aminoarsine precursors but by using two different reducing agents, diethylzinc for p-type and diisobutylaluminum hydride for n-type NCs, respectively. This is the first instance of semiconductor polarity control achieved at the synthesis level for InAs NCs and the entire semiconductor nanocrystal systems. Comparable field-effective mobilities for holes (3.3 × 10−3 cm2/V·s) and electrons (3.9 × 10−3 cm2/V·s) are achieved from the respective NC films. The mobility values allow the successful fabrication of complementary logic circuits, including NOT, NOR, and NAND comprising photopatterned p- and n-channels based on InAs NCs. | - |
dc.identifier.bibliographicCitation | SCIENCE ADVANCES, v.9, no.45, pp.eadj827 | - |
dc.identifier.doi | 10.1126/sciadv.adj8276 | - |
dc.identifier.issn | 2375-2548 | - |
dc.identifier.scopusid | 2-s2.0-85176464314 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/67157 | - |
dc.identifier.wosid | 001142520500009 | - |
dc.language | 영어 | - |
dc.publisher | American Association for the Advancement of Science (AAAS) | - |
dc.title | P- and N-type InAs nanocrystals with innately controlled semiconductor polarity | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | COLLOIDAL NANOCRYSTALS | - |
dc.subject.keywordPlus | ARSENIDE | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | SOLIDS | - |
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