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DC Field | Value | Language |
---|---|---|
dc.citation.startPage | 118534 | - |
dc.citation.title | CARBON | - |
dc.citation.volume | 216 | - |
dc.contributor.author | Kwak, Jong-Hyun | - |
dc.contributor.author | Cho, Wootaek | - |
dc.contributor.author | Kim, Beomsang | - |
dc.contributor.author | Kim, Taesung | - |
dc.contributor.author | Shin, Heungjoo | - |
dc.date.accessioned | 2023-12-20T15:35:10Z | - |
dc.date.available | 2023-12-20T15:35:10Z | - |
dc.date.created | 2023-12-11 | - |
dc.date.issued | 2024-01 | - |
dc.description.abstract | Through-silicon via (TSV) is a key packaging technology that facilitates the 2.5D/3D integration of microelectromechanical system (MEMS) devices. Among various MEMS technologies, C-MEMS enables micro/nanoscale 3D carbon structure manufacturing using high-temperature (600-1200 degrees C) pyrolysis. These hightemperature conditions limit the application of conventional TSV technologies to C-MEMS devices. This study presents a novel TSV with carbon via-sealing plates that are adaptable to C-MEMS device packaging. Via holes are drilled before integrating the MEMS device to protect the delicate micro/nanoscale structures. Moreover, the topside via inlet is sealed with a thin conductive pyrolyzed carbon plate to prevent the contamination of the via interior during the C-MEMS process and ensure an electrical connection between the devices and the vias. After integrating the C-MEMS devices, TSV fabrication is completed by coating the via inside with a metal layer from the wafer's bottom side, achieving a conductance per unit area of approximately 327 S/mm2 (via diameter = 33 mu m, length = 100 mu m). The applicability of the proposed wafer-level TSV technology to C-MEMS devices is then verified through the implementation of a suspended carbon nanowire-based gas sensor integrated with the developed TSV, which exhibits excellent signal transmission. Furthermore, the proposed TSV packaging technology can be applied to various micro/nanofabrication technologies because of its high-temperature/wetprocess compatibility and cost-effective fabrication. | - |
dc.identifier.bibliographicCitation | CARBON, v.216, pp.118534 | - |
dc.identifier.doi | 10.1016/j.carbon.2023.118534 | - |
dc.identifier.issn | 0008-6223 | - |
dc.identifier.scopusid | 2-s2.0-85174596350 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/66672 | - |
dc.identifier.wosid | 001102622700001 | - |
dc.language | 영어 | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | High-temperature adaptive through-silicon via with pyrolyzed carbon via-sealing plates for packaging 3D carbon nanostructure-based devices fabricated using C-MEMS | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Wafer-level packaging | - |
dc.subject.keywordAuthor | Through-silicon via | - |
dc.subject.keywordAuthor | Carbon via-sealing plates | - |
dc.subject.keywordAuthor | High-temperature compatibility | - |
dc.subject.keywordAuthor | C-MEMS | - |
dc.subject.keywordAuthor | Pyrolyzed carbon | - |
dc.subject.keywordPlus | ELECTRICAL-CONDUCTIVITY | - |
dc.subject.keywordPlus | ETCH RATE | - |
dc.subject.keywordPlus | TSV | - |
dc.subject.keywordPlus | INTEGRATION | - |
dc.subject.keywordPlus | SENSOR | - |
dc.subject.keywordPlus | INTERPOSERS | - |
dc.subject.keywordPlus | NANOWIRES | - |
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