File Download

  • Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
Related Researcher

DingFeng

Ding, Feng
Read More

Views & Downloads

Detailed Information

Cited time in webofscience Cited time in scopus
Metadata Downloads

The shapes of synthesized two-dimensional materials

Author(s)
Kong, XiaoFu, ChengruiGladkikh, VladislavDing, Feng
Issued Date
2023-06
DOI
10.1002/smm2.1152
URI
https://scholarworks.unist.ac.kr/handle/201301/66436
Citation
SmartMat, v.4, no.3, pp.e1152
Abstract
The shapes of as-grown/as-etched two-dimensional (2D) islands are the most recognizable features of the chemical vapor deposition (CVD) process which reveal a lot of information about the chemical environment of growth/etching, the effect of the substrate and the growth/etching kinetics. Here, we summarize experimentally observed shapes of CVD-grown 2D materials from previous reports, theoretical understanding on the corresponding mechanisms and the simulations of the corresponding growth/etching processes. Each part of the review article is organized by combining the fundamental principles that govern the shapes of crystals during growth/etching and the related experimental observations to facilitate the readers to read and understand the content. The content of the review includes attachment-limited 2D materials growth, diffusion-limited 2D materials growth (both with and without influence of the substrate), etching and merging of 2D materials with and without considering the effect of the substrate. We also discuss growth and etching of multilayered 2D islands during CVD—a topic still under development. We wish this review will also guide the audience to understand the kinetics of 2D materials growth and to improve controllable synthesis of various 2D materials. © 2022 The Authors. SmartMat published by Tianjin University and John Wiley & Sons Australia, Ltd.
Publisher
Wiley
ISSN
2688-819X
Keyword (Author)
2D materialschemical vapor depositiongrowthshape

qrcode

Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.