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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 3640 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 3634 | - |
dc.citation.title | ACS APPLIED ELECTRONIC MATERIALS | - |
dc.citation.volume | 5 | - |
dc.contributor.author | Prasad, Rakesh K. | - |
dc.contributor.author | Ghosh, Koushik | - |
dc.contributor.author | Giri, Pravat K. | - |
dc.contributor.author | Kim, Dai-Sik | - |
dc.contributor.author | Singh, Dilip K. | - |
dc.date.accessioned | 2023-12-21T11:51:50Z | - |
dc.date.available | 2023-12-21T11:51:50Z | - |
dc.date.created | 2023-08-07 | - |
dc.date.issued | 2023-07 | - |
dc.description.abstract | Future generation technologies demand high efficiencyphotodetectorsto enable sensing and switching devices for ultrafast communicationand machine vision. This requires direct-band gap materials with highphotosensitivity, high detectivity, and high quantum efficiency. Monolayeredtwo-dimensional-semiconductor-based photodetectors are the most promisingmaterials for such applications, although experimental realizationhas been limited due to the unavailability of a high-quality sample.In the current paper, we report about a WS2-based photodetectorhaving a sensitivity of 290 A W-1 upon 405 nm excitationand an incident power density as low as 0.06 mW/cm(2). Thefabricated device shows a detectivity of 52 x 10(14) with an external quantum efficiency of 89 x 10(3) %.The observed superior photoresponse parameters of the CVD-grown WS2-based photodetector as compared to Si-detectors establishits capability to replace the Si-photodetectors with monolayered ultrathindevice having superior performance parameters. | - |
dc.identifier.bibliographicCitation | ACS APPLIED ELECTRONIC MATERIALS, v.5, no.7, pp.3634 - 3640 | - |
dc.identifier.doi | 10.1021/acsaelm.3c00366 | - |
dc.identifier.issn | 2637-6113 | - |
dc.identifier.scopusid | 2-s2.0-85166757547 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/65793 | - |
dc.identifier.wosid | 001030447400001 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | High-Efficiency Photodetector Based on a CVD-Grown WS2 Monolayer | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Engineering; Materials Science | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | monolayer | - |
dc.subject.keywordAuthor | tungsten disulfide | - |
dc.subject.keywordAuthor | 2-dimensionalgrowth | - |
dc.subject.keywordAuthor | CVD | - |
dc.subject.keywordAuthor | high photosensitivity | - |
dc.subject.keywordAuthor | photodetectors | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | OPTOELECTRONICS | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | ULTRAVIOLET | - |
dc.subject.keywordPlus | ABSORPTION | - |
dc.subject.keywordPlus | FILMS | - |
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