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DC Field | Value | Language |
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dc.citation.startPage | 158186 | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 639 | - |
dc.contributor.author | Nguyen, Van Huy | - |
dc.contributor.author | Kim, Minwook | - |
dc.contributor.author | Nguyen, Cao Thang | - |
dc.contributor.author | Suleman, Muhammad | - |
dc.contributor.author | Nguyen, Dinh Cong | - |
dc.contributor.author | Nasir, Naila | - |
dc.contributor.author | Rehman, Malik Abdul | - |
dc.contributor.author | Park, Hyun Min | - |
dc.contributor.author | Lee, Sohee | - |
dc.contributor.author | Kim, Sung Youb | - |
dc.contributor.author | Kumar, Sunil | - |
dc.contributor.author | Seo, Yongho | - |
dc.date.accessioned | 2023-12-19T11:13:35Z | - |
dc.date.available | 2023-12-19T11:13:35Z | - |
dc.date.created | 2023-09-14 | - |
dc.date.issued | 2023-12 | - |
dc.description.abstract | 2D materials based on van der Waals heterostructures have remarkable applications in electronic de-vices. However, trapped contaminations between the interface heterostructure layers during fabrication pro-cesses degrade the device performance. Here, we report a novel fabrication method to prevent contamination of the device from air impurities to obtain atomically clean interfaces using an Argon shielding gas environment. Large-area graphene encapsulated with hexagonal boron nitride, approximately-12,637 & mu;m2, has been fabri-cated. Using the proposed methodology, high graphene mobility up to 600 000 cm2V- 1s- 1 at room temperature has been achieved. The theoretical analysis combined with a molecular dynamic simulation model was utilized to improve the dry transfer technique for large-scale fabrication of 2D materials. | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.639, pp.158186 | - |
dc.identifier.doi | 10.1016/j.apsusc.2023.158186 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.scopusid | 2-s2.0-85167786784 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/65520 | - |
dc.identifier.wosid | 001054576900001 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER | - |
dc.title | Fast fabrication technique for high-quality van der Waals heterostructures using inert shielding gas environment | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | 2D materials | - |
dc.subject.keywordAuthor | van der Waals heterostructures | - |
dc.subject.keywordAuthor | Dry transfer technique | - |
dc.subject.keywordAuthor | hBN encapsulated graphene | - |
dc.subject.keywordAuthor | Shielding inert gas | - |
dc.subject.keywordPlus | BALLISTIC TRANSPORT | - |
dc.subject.keywordPlus | RAMAN-SCATTERING | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | CRYSTALS | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | FILMS | - |
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