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기형선

Ki, Hyungson
Laser Processing and Artificial Intelligence Lab.
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dc.citation.endPage 117 -
dc.citation.number 2 -
dc.citation.startPage 110 -
dc.citation.title JOURNAL OF LASER APPLICATIONS -
dc.citation.volume 17 -
dc.contributor.author Ki, Hyungson -
dc.contributor.author Mazumder, J. -
dc.date.accessioned 2023-12-22T10:36:54Z -
dc.date.available 2023-12-22T10:36:54Z -
dc.date.created 2014-09-25 -
dc.date.issued 2005-05 -
dc.description.abstract A numerical model for simulating femtosecond laser interaction with silicon is presented. This model simulates laser beam propagation by directly solving Maxwell's equations using the finite-difference time-domain method, so that complete electromagnetic nature of a laser beam is simulated accurately. Accurate computation of laser beam passage ensures realistic heat generation pattern in the target material. The two-temperature model has been adopted to simulate the energy transport of electrons and lattices. This study reveals interesting results regarding thermal energy generation and complex laser beam passage in the silicon target. The temperature histories of electrons and lattices are presented. (c) 2005 Laser Institute of America. -
dc.identifier.bibliographicCitation JOURNAL OF LASER APPLICATIONS, v.17, no.2, pp.110 - 117 -
dc.identifier.doi 10.2351/1.1848529 -
dc.identifier.issn 1042-346X -
dc.identifier.scopusid 2-s2.0-33645156743 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/6541 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=33645156743 -
dc.identifier.wosid 000229158400006 -
dc.language 영어 -
dc.publisher AMER INST PHYSICS -
dc.title Numerical simulation of femtosecond laser interaction with silicon -
dc.type Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -

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