dc.citation.endPage |
117 |
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dc.citation.number |
2 |
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dc.citation.startPage |
110 |
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dc.citation.title |
JOURNAL OF LASER APPLICATIONS |
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dc.citation.volume |
17 |
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dc.contributor.author |
Ki, Hyungson |
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dc.contributor.author |
Mazumder, J. |
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dc.date.accessioned |
2023-12-22T10:36:54Z |
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dc.date.available |
2023-12-22T10:36:54Z |
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dc.date.created |
2014-09-25 |
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dc.date.issued |
2005-05 |
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dc.description.abstract |
A numerical model for simulating femtosecond laser interaction with silicon is presented. This model simulates laser beam propagation by directly solving Maxwell's equations using the finite-difference time-domain method, so that complete electromagnetic nature of a laser beam is simulated accurately. Accurate computation of laser beam passage ensures realistic heat generation pattern in the target material. The two-temperature model has been adopted to simulate the energy transport of electrons and lattices. This study reveals interesting results regarding thermal energy generation and complex laser beam passage in the silicon target. The temperature histories of electrons and lattices are presented. (c) 2005 Laser Institute of America. |
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dc.identifier.bibliographicCitation |
JOURNAL OF LASER APPLICATIONS, v.17, no.2, pp.110 - 117 |
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dc.identifier.doi |
10.2351/1.1848529 |
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dc.identifier.issn |
1042-346X |
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dc.identifier.scopusid |
2-s2.0-33645156743 |
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dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/6541 |
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dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=33645156743 |
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dc.identifier.wosid |
000229158400006 |
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dc.language |
영어 |
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dc.publisher |
AMER INST PHYSICS |
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dc.title |
Numerical simulation of femtosecond laser interaction with silicon |
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dc.type |
Article |
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dc.description.journalRegisteredClass |
scie |
- |
dc.description.journalRegisteredClass |
scopus |
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