Full metadata record
DC Field | Value | Language |
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dc.citation.number | 1 | - |
dc.citation.startPage | 60 | - |
dc.citation.title | NPJ 2D MATERIALS AND APPLICATIONS | - |
dc.citation.volume | 7 | - |
dc.contributor.author | Park, Youngsin | - |
dc.contributor.author | Li, Nannan | - |
dc.contributor.author | Jung, Daesung | - |
dc.contributor.author | Singh, Laishram Tomba | - |
dc.contributor.author | Baik, Jaeyoon | - |
dc.contributor.author | Lee, Eunsook | - |
dc.contributor.author | Oh, Dongseok | - |
dc.contributor.author | Kim, Young Dok | - |
dc.contributor.author | Lee, Jin Yong | - |
dc.contributor.author | Woo, Jeongseok | - |
dc.contributor.author | Park, Seungmin | - |
dc.contributor.author | Kim, Hanchul | - |
dc.contributor.author | Lee, Geunseop | - |
dc.contributor.author | Lee, Geunsik | - |
dc.contributor.author | Hwang, Chan-Cuk | - |
dc.date.accessioned | 2023-12-21T11:44:46Z | - |
dc.date.available | 2023-12-21T11:44:46Z | - |
dc.date.created | 2023-09-13 | - |
dc.date.issued | 2023-09 | - |
dc.description.abstract | MoS2 has attracted intense interest in many applications. Natural MoS2 and field-effect transistors made of it generally exhibit n-type characteristics, but its origin is unknown. Herein, we show that C is the origin of the universal n-type doping of natural MoS2. Photoemission spectroscopies reveal that while many MoS2 samples with C detected are n-type, some without C exhibit p-type characteristics. The C-free, p-type MoS2 changes to n-type over time with the concurrent appearance of C that is out-diffused from bulk, indicating that C induces the n-type doping. The C-origin is verified by C-deposition and supported by theoretical calculations. This carbon appears as nanometer-scale defects frequently observed in scanning tunneling microscopy. In addition, we propose, based on the calculations, that S vacancies are responsible for the p-type characteristics, which contrasts with the widespread belief. This work provides new perspectives on MoS2 doping and presents a new direction for fabricating reliable MoS2 devices. | - |
dc.identifier.bibliographicCitation | NPJ 2D MATERIALS AND APPLICATIONS, v.7, no.1, pp.60 | - |
dc.identifier.doi | 10.1038/s41699-023-00424-x | - |
dc.identifier.issn | 2397-7132 | - |
dc.identifier.scopusid | 2-s2.0-85169813983 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/65411 | - |
dc.identifier.wosid | 001069982400001 | - |
dc.language | 영어 | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Unveiling the origin of n-type doping of natural MoS2: carbon | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology;Materials Science, Multidisciplinary;Physics, Applied | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics;Materials Science;Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | ELECTRONIC TRANSPORT-PROPERTIES | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordPlus | EVOLUTION | - |
dc.subject.keywordPlus | CONTACT | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | LAYERS | - |
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