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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science

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Electroreflectance and photoluminescence study of InN

DC Field Value Language
dc.contributor.author Yoon, JW ko
dc.contributor.author Kim, SS ko
dc.contributor.author Cheong, H ko
dc.contributor.author Seo, HC ko
dc.contributor.author Kwon, Soon-Yong ko
dc.contributor.author Kim, HJ ko
dc.contributor.author Shin, Y ko
dc.contributor.author Yoon, E ko
dc.contributor.author Park, YS ko
dc.date.available 2014-09-29T01:35:02Z -
dc.date.created 2014-09-24 ko
dc.date.issued 2005-10 -
dc.identifier.citation SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.20, no.10, pp.1068 - 1071 ko
dc.identifier.issn 0268-1242 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/6531 -
dc.identifier.uri http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=25444478300 ko
dc.description.abstract Photoluminescence and electroreflectance (ER) measurements on InN thin films grown by metal-organic chemical vapour deposition were performed at ambient and low temperatures. Franz-Keldysh oscillations (FKO's) were observed in the ER spectra. From the analysis of the FKO's, the bandgap of an as-deposited film is estimated to be 0.66 ± 0.02 eV at 90 K, whereas the low-temperature (8 K) photoluminescence (PL) appears as a broad peak between 0.67 eV and 0.77 eV. When the sample is annealed in air at temperatures below 420 °C, the bandgap energy at 90 K estimated from the FKO redshifts to 0.62 ± 0.02 eV. When the sample is annealed at temperatures of 420 °C or above, the low energy PL disappears, but the FKO signal persists with the same bandgap energy. We interpret that the crystalline quality of InN improves with annealing at lower temperatures but degrades dramatically with higher temperature annealing and conclude that the intrinsic bandgap energy of InN at 90 K is 0.62 ± 0.02 eV. ko
dc.description.statementofresponsibility close -
dc.language ENG ko
dc.publisher IOP PUBLISHING LTD ko
dc.subject FRANZ-KELDYSH OSCILLATIONS ko
dc.subject FUNDAMENTAL-BAND GAP ko
dc.subject INDIUM NITRIDE ko
dc.subject ABSORPTION ko
dc.subject INXGA1-XN ko
dc.subject ALLOYS ko
dc.subject FILMS ko
dc.title Electroreflectance and photoluminescence study of InN ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-25444478300 ko
dc.identifier.wosid 000232992800016 ko
dc.type.rims ART ko
dc.description.wostc 10 *
dc.description.scopustc 9 *
dc.date.tcdate 2015-05-06 *
dc.date.scptcdate 2014-09-24 *
dc.identifier.doi 10.1088/0268-1242/20/10/014 ko
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