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DC Field | Value | Language |
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dc.citation.endPage | 3075 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 3068 | - |
dc.citation.title | ACS SENSORS | - |
dc.citation.volume | 8 | - |
dc.contributor.author | Jeon, Mingyu | - |
dc.contributor.author | Kim, Minhyuk | - |
dc.contributor.author | Lee, Joon-Seok | - |
dc.contributor.author | Kim, Honghui | - |
dc.contributor.author | Choi, Seon-Jin | - |
dc.contributor.author | Moon, Hoi Ri | - |
dc.contributor.author | Kim, Jihan | - |
dc.date.accessioned | 2023-12-21T11:50:43Z | - |
dc.date.available | 2023-12-21T11:50:43Z | - |
dc.date.created | 2023-08-24 | - |
dc.date.issued | 2023-08 | - |
dc.description.abstract | Conductive two-dimensional metal-organic frameworks(2DMOFs) have attracted interest as they induce strong charge delocalizationand improve charge carrier mobility and concentration. However, characterizingtheir stacking mode depends on expensive and time-consuming experimentalmeasurements. Here, we construct a potential energy surface (PES)map database for 36 2D MOFs using density functional theory (DFT)for the experimentally synthesized and non-synthesized 2D MOFs topredict their stacking mode. The DFT PES results successfully predictthe experimentally synthesized stacking mode with an accuracy of 92.9%and explain the coexistence mechanism of dual stacking modes in asingle compound. Furthermore, we analyze the chemical (i.e., host-guestinteraction) and electrical (i.e., electronic structure) propertychanges affected by stacking mode. The DFT results show that the host-guestinteraction can be enhanced by the transition from AA to AB stacking,taking H2S gas as a case study. The electronic band structurecalculation confirms that as AB stacking displacement increases, thein-plane charge transport pathway is reduced while the out-of-planecharge transport pathway is maintained or even increased. These resultsindicate that there is a trade-off between chemical and electricalproperties in accordance with the stacking mode. | - |
dc.identifier.bibliographicCitation | ACS SENSORS, v.8, no.8, pp.3068 - 3075 | - |
dc.identifier.doi | 10.1021/acssensors.3c00715 | - |
dc.identifier.issn | 2379-3694 | - |
dc.identifier.scopusid | 2-s2.0-85167914186 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/65166 | - |
dc.identifier.wosid | 001038341200001 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Computational Prediction of Stacking Mode in Conductive Two-Dimensional Metal-Organic Frameworks: An Exploration of Chemical and Electrical Property Changes | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Analytical; Nanoscience & Nanotechnology | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | host-guestinteraction | - |
dc.subject.keywordAuthor | metal-organic framework | - |
dc.subject.keywordAuthor | two-dimensional | - |
dc.subject.keywordAuthor | stacking mode | - |
dc.subject.keywordAuthor | potential energy surface map | - |
dc.subject.keywordAuthor | chemicalproperty | - |
dc.subject.keywordAuthor | electrical property | - |
dc.subject.keywordAuthor | band structure | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | CRYSTALS | - |
dc.subject.keywordPlus | HYDROGEN-SULFIDE EXPOSURE | - |
dc.subject.keywordPlus | NANOSHEETS | - |
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