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윤태식

Yoon, Tae-Sik
Nano Semiconductor Research Lab.
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dc.citation.number 1 -
dc.citation.startPage 9592 -
dc.citation.title SCIENTIFIC REPORTS -
dc.citation.volume 13 -
dc.contributor.author Sahu, Dwipak Prasad -
dc.contributor.author Park, Kitae -
dc.contributor.author Chung, Peter Hayoung -
dc.contributor.author Han, Jimin -
dc.contributor.author Yoon, Tae-Sik -
dc.date.accessioned 2023-12-21T12:36:40Z -
dc.date.available 2023-12-21T12:36:40Z -
dc.date.created 2023-07-26 -
dc.date.issued 2023-06 -
dc.description.abstract Memristive devices have been explored as electronic synaptic devices to mimic biological synapses for developing hardware-based neuromorphic computing systems. However, typical oxide memristive devices suffered from abrupt switching between high and low resistance states, which limits access to achieve various conductance states for analog synaptic devices. Here, we proposed an oxide/suboxide hafnium oxide bilayer memristive device by altering oxygen stoichiometry to demonstrate analog filamentary switching behavior. The bilayer device with Ti/HfO2/HfO2-x(oxygen-deficient)/Pt structure exhibited analog conductance states under a low voltage operation through controlling filament geometry as well as superior retention and endurance characteristics thanks to the robust nature of filament. A narrow cycle-to-cycle and device-to-device distribution were also demonstrated by the filament confinement in a limited region. The different concentrations of oxygen vacancies at each layer played a significant role in switching phenomena, as confirmed through X-ray photoelectron spectroscopy analysis. The analog weight update characteristics were found to strongly depend on the various conditions of voltage pulse parameters including its amplitude, width, and interval time. In particular, linear and symmetric weight updates for accurate learning and pattern recognition could be achieved by adopting incremental step pulse programming (ISPP) operation scheme which rendered a high-resolution dynamic range with linear and symmetry weight updates as a consequence of precisely controlled filament geometry. A two-layer perceptron neural network simulation with HfO2/HfO2-x synapses provided an 80% recognition accuracy for handwritten digits. The development of oxide/suboxide hafnium oxide memristive devices has the capacity to drive forward the development of efficient neuromorphic computing systems. -
dc.identifier.bibliographicCitation SCIENTIFIC REPORTS, v.13, no.1, pp.9592 -
dc.identifier.doi 10.1038/s41598-023-36784-z -
dc.identifier.issn 2045-2322 -
dc.identifier.scopusid 2-s2.0-85161843980 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/65093 -
dc.identifier.wosid 001011884700028 -
dc.language 영어 -
dc.publisher NATURE PORTFOLIO -
dc.title Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfOx bilayer memristive device for neuromorphic computing -
dc.type Article -
dc.description.isOpenAccess TRUE -
dc.relation.journalWebOfScienceCategory Multidisciplinary Sciences -
dc.relation.journalResearchArea Science & Technology - Other Topics -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus MEMORY -
dc.subject.keywordPlus TRANSITION -
dc.subject.keywordPlus SPEED -
dc.subject.keywordPlus ARRAY -
dc.subject.keywordPlus TAOX -
dc.subject.keywordPlus LOW-POWER -

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