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Ki, Hyungson
Laser Processing & Multiphysics Systems Laboratory
Research Interests
  • Laser materials processing
  • Laser material interaction


Effect of ionization on femtosecond laser pulse interaction with silicon

DC Field Value Language Li, Huayu ko Ki, Hyungson ko 2014-09-29T01:34:36Z - 2014-09-25 ko 2006-11 ko
dc.identifier.citation JOURNAL OF APPLIED PHYSICS, v.100, no.10, pp.104907 ko
dc.identifier.issn 0021-8979 ko
dc.identifier.uri -
dc.description.abstract Femtosecond laser pulse interaction with silicon is studied numerically considering the ionization process induced by the intense electromagnetic field of the laser pulse. The electromagnetic field is calculated by solving Maxwell's equations using the finite-difference time-domain method, and the two-temperature model is employed for the electron-lattice energy coupling. The electron number density is computed by an ionization model based on the energy balance of laser energy; the electrical conductivity of the dense plasma is predicted accounting for the number density and temperature of electrons. This article presents some interesting results on electromagnetic field in the silicon substrate, electron and lattice temperatures, electrical conductivity, and electron number density depending on laser pulse energy and pulse width. In particular, this study explains some physical phenomena pertaining only to femtosecond laser pulses, such as existence of threshold intensity. ko
dc.description.statementofresponsibility open -
dc.language 영어 ko
dc.publisher AMER INST PHYSICS ko
dc.title Effect of ionization on femtosecond laser pulse interaction with silicon ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-33845213062 ko
dc.identifier.wosid 000242408000110 ko
dc.type.rims ART ko
dc.description.wostc 6 *
dc.description.scopustc 56 * 2015-05-06 * 2014-09-25 *
dc.identifier.doi 10.1063/1.2388853 ko
dc.identifier.url ko
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