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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices Lab.
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dc.citation.endPage 2414 -
dc.citation.number 7 -
dc.citation.startPage 2411 -
dc.citation.title Physica Status Solidi (C) Current Topics in Solid State Physics -
dc.citation.volume 4 -
dc.contributor.author Kim, Hyunjin -
dc.contributor.author Dang, Cuong -
dc.contributor.author Song, Yoon-Kyu -
dc.contributor.author Zhang, Qiang -
dc.contributor.author Patterson, William -
dc.contributor.author Nurmikko, A. V. -
dc.contributor.author Kim, K. K. -
dc.contributor.author Kwon, Soon-Yong -
dc.contributor.author Han, Jung -
dc.date.accessioned 2023-12-22T09:38:19Z -
dc.date.available 2023-12-22T09:38:19Z -
dc.date.created 2014-09-24 -
dc.date.issued 2007 -
dc.description.abstract We explore hybrid gallium nitride-organic semiconductors as composite layered thin film materials and report on initial results of fundamental studies of carrier transport across a junction composed of InGaN and selected organic thin films, with the eventual application goal towards versatile optoelectronic devices. -
dc.identifier.bibliographicCitation Physica Status Solidi (C) Current Topics in Solid State Physics, v.4, no.7, pp.2411 - 2414 -
dc.identifier.doi 10.1002/pssc.200674924 -
dc.identifier.issn 1862-6351 -
dc.identifier.scopusid 2-s2.0-49749098512 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/6501 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=49749098512 -
dc.identifier.wosid 000248047600050 -
dc.language 영어 -
dc.publisher Wiley-VCH Verlag -
dc.title Nitride-organic semiconductor hybrid heterostructures for optoelectronic devices -
dc.type Article -
dc.description.journalRegisteredClass scopus -

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