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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 954 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 951 | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 44 | - |
dc.contributor.author | Wahid, Sumaiya | - |
dc.contributor.author | Daus, Alwin | - |
dc.contributor.author | Kwon, Jimin | - |
dc.contributor.author | Qin, Shengjun | - |
dc.contributor.author | Ko, Jung-Soo | - |
dc.contributor.author | Wong, H. -S. Philip | - |
dc.contributor.author | Pop, Eric | - |
dc.date.accessioned | 2023-12-21T12:36:53Z | - |
dc.date.available | 2023-12-21T12:36:53Z | - |
dc.date.created | 2023-07-20 | - |
dc.date.issued | 2023-06 | - |
dc.description.abstract | We report ultrathin (similar to 4 nm) channel indium tin oxide (ITO) transistors, comparing different precursors for atomic layer deposition (ALD) of the Al2O3 top-gate dielectric, and analyze the role of dielectric deposition on transistor performance and gate bias stress stability. Water-based ALD leads to very negative threshold voltage (V-T), with devices remaining in the on-state. In contrast, both ozone and O-2-plasma precursors yield devices that can turn off, but ozone-based ALD devices have less negative V-T shift at short channel lengths, and relatively more positive V-T at all channel lengths. We achieve maximum drive current, I-max approximate to 260 (mu)A/(mu)m at V-DS = 1 V, on/off current ratio of >10(10) (limited by the instrument's noise floor) for L approximate to 700 nm ozone-Al2O3 top-gated transistors. Across multiple devices, the effective mobility is similar to 42 cm(2)V(-1)s(-1) and contact resistance is similar to 376 Omega center dot mu m. The transistors also show good gate bias stability with normalized VT shift of +0.12 V(MV/cm)(-1) at gate stress field >3 MV/cm, a similar to 3x improvement vs. our previous reports of uncapped ITO transistors. | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.44, no.6, pp.951 - 954 | - |
dc.identifier.doi | 10.1109/LED.2023.3265316 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.scopusid | 2-s2.0-85153341726 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/65003 | - |
dc.identifier.wosid | 001001401500019 | - |
dc.language | 영어 | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Effect of Top-Gate Dielectric Deposition on the Performance of Indium Tin Oxide Transistors | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalResearchArea | Engineering | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | ITO | - |
dc.subject.keywordAuthor | transistors | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | effective mobility | - |
dc.subject.keywordAuthor | contact resistance | - |
dc.subject.keywordAuthor | bias stress stability | - |
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