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Kwon, Soon-Yong
Frontier, Innovative Nanomaterials & Devices (FIND) Lab
Research Interests
  • Semiconductor Epitaxy, thin film technology & surface/ interface Science


AlGaN deep ultraviolet LEDs on bulk AIN substrates

DC Field Value Language Ren, Zaiyuan ko Sun, Q. ko Kwon, Soon-Yong ko Han, J. ko Davitt, K. ko Song, Y. K. ko Nurmikko, A. V. ko Liu, W. ko Smart, J. ko Schowalter, L. ko 2014-09-29T01:34:28Z - 2014-09-24 ko 2007 ko
dc.identifier.citation Physica Status Solidi (C) Current Topics in Solid State Physics, v.4, no.7, pp.2482 - 2485 ko
dc.identifier.issn 1862-6351 ko
dc.identifier.uri -
dc.identifier.uri ko
dc.description.abstract We report the growth of sub-300 nm ultraviolet light emitting diodes (UV LEDs) on bulk AlN substrates. Heteroepitaxial evolution study through interrupted growth experiments revealed that AlxGa1-xN (x > 0.5) epilayers can be grown pseudomorphically with well-defined step-flow growth mode below a certain critical thickness. The build-up of compressive strain energy eventually induces a morphological roughening followed by the admission of misfit dislocations. LEDs grown on bulk AlN substrates exhibit noticable improvement over those on sapphire in device impedance, efficiency and thermal characteristics under high-level injection, pointing to a promising substrate platform for high performance III-nitride ultraviolet optoelectronics. ko
dc.description.statementofresponsibility close -
dc.language ENG ko
dc.publisher Wiley-VCH Verlag ko
dc.subject Bulk AlN ko
dc.subject Deep ultra violet ko
dc.subject Heteroepitaxial ko
dc.subject Interrupted growth ko
dc.subject Nitride semiconductors ko
dc.subject Ultraviolet light emitting diodes ko
dc.title AlGaN deep ultraviolet LEDs on bulk AIN substrates ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-48549099123 ko
dc.identifier.wosid 000248047600067 ko
dc.type.rims ART ko
dc.description.wostc 9 *
dc.description.scopustc 9 * 2015-05-06 * 2014-09-24 *
dc.identifier.doi 10.1002/pssc.200674758 ko
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