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Kim, Jin Young
Next Generation Energy Laboratory
Research Interests
  • Polymer solar cells, QD solar cells, organic-inorganic hybrid solar cells, perovskite solar cells, OLEDs, PeLEDs, organic FETs

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Multilayer bipolar field-effect transistors

DC Field Value Language
dc.contributor.author Cho, Shinuk ko
dc.contributor.author Yuen, Jonathan ko
dc.contributor.author Kim, Jin Young ko
dc.contributor.author Lee, Kwanghee ko
dc.contributor.author Heeger, Alan J. ko
dc.contributor.author Lee, Sangyun ko
dc.date.available 2014-09-29T01:33:59Z -
dc.date.created 2014-09-25 ko
dc.date.issued 2008-02 -
dc.identifier.citation APPLIED PHYSICS LETTERS, v.92, no.6, pp.1 - 3 ko
dc.identifier.issn 0003-6951 ko
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/6474 -
dc.identifier.uri http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=39349103224 ko
dc.description.abstract Field-effect transistors comprising a layer of regioregular poly(3-hexylthiophene) (rr-P3HT) separated from a parallel layer of the soluble fullerene,[6,6]-phenyl C-61-butyric acid methyl ester (PCBM) by a layer of titanium suboxide (TiOx), are fabricated by solution processing. Because the TiOx is an electron transporting material and a hole blocking material, this multilayer architecture operates either in the p-channel mode with holes in the rr-P3HT layer or in the n-channel mode with electrons in the PCBM layer. ko
dc.description.statementofresponsibility open -
dc.language ENG ko
dc.publisher AMER INST PHYSICS ko
dc.subject THIN-FILM TRANSISTORS ko
dc.subject POLYMER ko
dc.subject TRANSPORT ko
dc.subject HETEROSTRUCTURE ko
dc.subject EFFICIENCY ko
dc.subject INVERTERS ko
dc.subject MOBILITY ko
dc.subject CELLS ko
dc.subject C-60 ko
dc.title Multilayer bipolar field-effect transistors ko
dc.type ARTICLE ko
dc.identifier.scopusid 2-s2.0-39349103224 ko
dc.identifier.wosid 000253237900110 ko
dc.type.rims ART ko
dc.description.wostc 20 *
dc.description.scopustc 17 *
dc.date.tcdate 2015-05-06 *
dc.date.scptcdate 2014-09-25 *
dc.identifier.doi 10.1063/1.2816913 ko
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