ScholarWorks: Multilayer bipolar field-effect transistors

BROWSE

Related Researcher

Author's Photo

Kim, Jin Young

Next Generation Energy Laboratory

Research Interests

Polymer solar cells, QD solar cells, organic-inorganic hybrid solar cells, perovskite solar cells, OLEDs, PeLEDs, organic FETs

ITEM VIEW & DOWNLOAD

Multilayer bipolar field-effect transistors

DC Field	Value	Language
dc.contributor.author	Cho, Shinuk	ko
dc.contributor.author	Yuen, Jonathan	ko
dc.contributor.author	Kim, Jin Young	ko
dc.contributor.author	Lee, Kwanghee	ko
dc.contributor.author	Heeger, Alan J.	ko
dc.contributor.author	Lee, Sangyun	ko
dc.date.available	2014-09-29T01:33:59Z	-
dc.date.created	2014-09-25	ko
dc.date.issued	2008-02	-
dc.identifier.citation	APPLIED PHYSICS LETTERS, v.92, no.6, pp.1 - 3	ko
dc.identifier.issn	0003-6951	ko
dc.identifier.uri	https://scholarworks.unist.ac.kr/handle/201301/6474	-
dc.identifier.uri	http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=39349103224	ko
dc.description.abstract	Field-effect transistors comprising a layer of regioregular poly(3-hexylthiophene) (rr-P3HT) separated from a parallel layer of the soluble fullerene,[6,6]-phenyl C-61-butyric acid methyl ester (PCBM) by a layer of titanium suboxide (TiOx), are fabricated by solution processing. Because the TiOx is an electron transporting material and a hole blocking material, this multilayer architecture operates either in the p-channel mode with holes in the rr-P3HT layer or in the n-channel mode with electrons in the PCBM layer.	ko
dc.description.statementofresponsibility	open	-
dc.language	ENG	ko
dc.publisher	AMER INST PHYSICS	ko
dc.subject	THIN-FILM TRANSISTORS	ko
dc.subject	POLYMER	ko
dc.subject	TRANSPORT	ko
dc.subject	HETEROSTRUCTURE	ko
dc.subject	EFFICIENCY	ko
dc.subject	INVERTERS	ko
dc.subject	MOBILITY	ko
dc.subject	CELLS	ko
dc.subject	C-60	ko
dc.title	Multilayer bipolar field-effect transistors	ko
dc.type	ARTICLE	ko
dc.identifier.scopusid	2-s2.0-39349103224	ko
dc.identifier.wosid	000253237900110	ko
dc.type.rims	ART	ko
dc.description.wostc	20	*
dc.description.scopustc	17	*
dc.date.tcdate	2015-05-06	*
dc.date.scptcdate	2014-09-25	*
dc.identifier.doi	10.1063/1.2816913	ko