dc.citation.endPage |
3 |
- |
dc.citation.number |
6 |
- |
dc.citation.startPage |
1 |
- |
dc.citation.title |
APPLIED PHYSICS LETTERS |
- |
dc.citation.volume |
92 |
- |
dc.contributor.author |
Cho, Shinuk |
- |
dc.contributor.author |
Yuen, Jonathan |
- |
dc.contributor.author |
Kim, Jin Young |
- |
dc.contributor.author |
Lee, Kwanghee |
- |
dc.contributor.author |
Heeger, Alan J. |
- |
dc.contributor.author |
Lee, Sangyun |
- |
dc.date.accessioned |
2023-12-22T08:45:49Z |
- |
dc.date.available |
2023-12-22T08:45:49Z |
- |
dc.date.created |
2014-09-25 |
- |
dc.date.issued |
2008-02 |
- |
dc.description.abstract |
Field-effect transistors comprising a layer of regioregular poly(3-hexylthiophene) (rr-P3HT) separated from a parallel layer of the soluble fullerene,[6,6]-phenyl C-61-butyric acid methyl ester (PCBM) by a layer of titanium suboxide (TiOx), are fabricated by solution processing. Because the TiOx is an electron transporting material and a hole blocking material, this multilayer architecture operates either in the p-channel mode with holes in the rr-P3HT layer or in the n-channel mode with electrons in the PCBM layer. |
- |
dc.identifier.bibliographicCitation |
APPLIED PHYSICS LETTERS, v.92, no.6, pp.1 - 3 |
- |
dc.identifier.doi |
10.1063/1.2816913 |
- |
dc.identifier.issn |
0003-6951 |
- |
dc.identifier.scopusid |
2-s2.0-39349103224 |
- |
dc.identifier.uri |
https://scholarworks.unist.ac.kr/handle/201301/6474 |
- |
dc.identifier.url |
http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=39349103224 |
- |
dc.identifier.wosid |
000253237900110 |
- |
dc.language |
영어 |
- |
dc.publisher |
AMER INST PHYSICS |
- |
dc.title |
Multilayer bipolar field-effect transistors |
- |
dc.type |
Article |
- |
dc.description.journalRegisteredClass |
scopus |
- |