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- Kim, Jin Young
- Next Generation Energy Lab.
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 3 | - |
| dc.citation.number | 6 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.title | APPLIED PHYSICS LETTERS | - |
| dc.citation.volume | 92 | - |
| dc.contributor.author | Cho, Shinuk | - |
| dc.contributor.author | Yuen, Jonathan | - |
| dc.contributor.author | Kim, Jin Young | - |
| dc.contributor.author | Lee, Kwanghee | - |
| dc.contributor.author | Heeger, Alan J. | - |
| dc.contributor.author | Lee, Sangyun | - |
| dc.date.accessioned | 2023-12-22T08:45:49Z | - |
| dc.date.available | 2023-12-22T08:45:49Z | - |
| dc.date.created | 2014-09-25 | - |
| dc.date.issued | 2008-02 | - |
| dc.description.abstract | Field-effect transistors comprising a layer of regioregular poly(3-hexylthiophene) (rr-P3HT) separated from a parallel layer of the soluble fullerene,[6,6]-phenyl C-61-butyric acid methyl ester (PCBM) by a layer of titanium suboxide (TiOx), are fabricated by solution processing. Because the TiOx is an electron transporting material and a hole blocking material, this multilayer architecture operates either in the p-channel mode with holes in the rr-P3HT layer or in the n-channel mode with electrons in the PCBM layer. | - |
| dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.92, no.6, pp.1 - 3 | - |
| dc.identifier.doi | 10.1063/1.2816913 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.scopusid | 2-s2.0-39349103224 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/6474 | - |
| dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=39349103224 | - |
| dc.identifier.wosid | 000253237900110 | - |
| dc.language | 영어 | - |
| dc.publisher | AMER INST PHYSICS | - |
| dc.title | Multilayer bipolar field-effect transistors | - |
| dc.type | Article | - |
| dc.description.journalRegisteredClass | scopus | - |
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