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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 3008 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 3004 | - |
dc.citation.title | JOURNAL OF CRYSTAL GROWTH | - |
dc.citation.volume | 310 | - |
dc.contributor.author | Kim, Hee Jin | - |
dc.contributor.author | Shin, Yoori | - |
dc.contributor.author | Kwon, Soon-Yong | - |
dc.contributor.author | Kwon, Soon-Yong | - |
dc.contributor.author | Kim, Hyun Jin | - |
dc.contributor.author | Choi, Suk | - |
dc.contributor.author | Hong, Sukwon | - |
dc.contributor.author | Kim, Chang Soo | - |
dc.contributor.author | Yoon, Jung-Won | - |
dc.contributor.author | Cheong, Hyeonsik | - |
dc.contributor.author | Yoon, Euijoon | - |
dc.date.accessioned | 2023-12-22T08:39:55Z | - |
dc.date.available | 2023-12-22T08:39:55Z | - |
dc.date.created | 2014-09-24 | - |
dc.date.issued | 2008-06 | - |
dc.description.abstract | In-rich InGaN layers were successfully grown on GaN templates by metalorganic chemical vapor deposition. In incorporation in InGaN layer was enhanced by decreasing the growth temperature, and In-rich InGaN layer with In content higher than 70% was obtained below 670 °C. Especially, double peaks from In-rich InGaN grown at 640 °C appeared in X-ray diffraction pattern and photoluminescence (PL). The further investigation of strain status of InGaN layers by reciprocal space mapping (RSM) clarified that In-rich InGaN layers were fully relaxed and consisted of InGaN alloys of two different In contents of 82% and 97%, respectively. As a result, we confirmed that compositional inhomogeneity which is mainly reported in Ga-rich InGaN layer could exist in In-rich InGaN layer higher than 80%. We also investigated In incorporation behavior in InGaN at low temperature (640 °C). In content in InGaN layer was found to be controlled by just changing input gas phase mole fraction (TMIn/(TMGa+TMIn)) at low growth temperature and a linear relationship was observed between In content in InGaN layers and gas phase mole fraction. | - |
dc.identifier.bibliographicCitation | JOURNAL OF CRYSTAL GROWTH, v.310, no.12, pp.3004 - 3008 | - |
dc.identifier.doi | 10.1016/j.jcrysgro.2008.02.032 | - |
dc.identifier.issn | 0022-0248 | - |
dc.identifier.scopusid | 2-s2.0-44149098597 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/6463 | - |
dc.identifier.url | http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=44149098597 | - |
dc.identifier.wosid | 000257006800010 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Compositional analysis of In-rich InGaN layers grown on GaN templates by metalorganic chemical vapor deposition | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
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