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DC Field | Value | Language |
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dc.citation.startPage | 111991 | - |
dc.citation.title | MICROELECTRONIC ENGINEERING | - |
dc.citation.volume | 275 | - |
dc.contributor.author | Im, Byoungyong | - |
dc.contributor.author | Kim, Sunjung | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.date.accessioned | 2023-12-21T12:41:25Z | - |
dc.date.available | 2023-12-21T12:41:25Z | - |
dc.date.created | 2023-06-15 | - |
dc.date.issued | 2023-04 | - |
dc.description.abstract | Direct Cu electrodeposition on a 3-nm-thick atomic-layer-deposited (ALD) Ru diffusion barrier layer was investigated for Cu interconnect in Si-based microelectronic devices. A Cu-ammonia-citrate (Cu-NH3-Cit) electrolyte was employed with no additives. The nucleation behavior of Cu on Ru was dependent on the cathodic potential applied to ALD Ru/SiO2/Si wafer specimen whether it is instantaneous or progressive. Preferable instantaneous nucleation with a high area density of Cu nuclei on Ru contributed to the formation of uniform Cu thin films. Lastly, direct Cu electrodeposition onto Ru at a constant cathodic potential of -1.0 V filled 30-nmwide and 120-nm-deep trenches with void-free Cu. | - |
dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.275, pp.111991 | - |
dc.identifier.doi | 10.1016/j.mee.2023.111991 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.scopusid | 2-s2.0-85151024158 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64502 | - |
dc.identifier.wosid | 000995100900001 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER | - |
dc.title | Nucleation-controlled growth of Cu thin films electrodeposited directly on ALD Ru diffusion barrier in additive-free electrolyte for Cu interconnect | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics, Applied | - |
dc.relation.journalResearchArea | Engineering; Science & Technology - Other Topics; Optics; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Electrodeposition | - |
dc.subject.keywordAuthor | Cu thin film | - |
dc.subject.keywordAuthor | Additive-free electrolyte | - |
dc.subject.keywordAuthor | Nucleation | - |
dc.subject.keywordAuthor | Metallic diffusion barrier | - |
dc.subject.keywordPlus | DIRECT COPPER ELECTRODEPOSITION | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | LINER MATERIALS | - |
dc.subject.keywordPlus | ASPECT-RATIO | - |
dc.subject.keywordPlus | TIN | - |
dc.subject.keywordPlus | METALLIZATION | - |
dc.subject.keywordPlus | RUTHENIUM | - |
dc.subject.keywordPlus | ADHESION | - |
dc.subject.keywordPlus | CARBIDE | - |
dc.subject.keywordPlus | BATH | - |
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