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DC Field | Value | Language |
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dc.citation.endPage | 3104 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 3095 | - |
dc.citation.title | CHEMISTRY OF MATERIALS | - |
dc.citation.volume | 35 | - |
dc.contributor.author | Jagadeeswararao, Metikoti | - |
dc.contributor.author | Sim, Kyu Min | - |
dc.contributor.author | Lee, Sangjun | - |
dc.contributor.author | Kang, Mingyun | - |
dc.contributor.author | An, Sanghyeok | - |
dc.contributor.author | Nam, Geon-Hee | - |
dc.contributor.author | Sim, Hye Ryun | - |
dc.contributor.author | Oleiki, Elham | - |
dc.contributor.author | Lee, Geunsik | - |
dc.contributor.author | Chung, Dae Sung | - |
dc.date.accessioned | 2023-12-21T12:42:35Z | - |
dc.date.available | 2023-12-21T12:42:35Z | - |
dc.date.created | 2023-05-08 | - |
dc.date.issued | 2023-04 | - |
dc.description.abstract | Photomultiplication (PM)-type photodetectors with a high external quantum efficiency (EQE) can be realized through adequately engineered trap states and trap-assisted charge injection. By strategically introducing slightly rich Bi and highly rich Br stoichiometric conditions, efficient trap states are realized for holes in lead-free Cs1.98AgBi1.15Br7.9 double perovskite (DP). With the diode structure of ITO/SnO2/Cs1.98AgBi1.15Br7.9/poly(3-hexylthiophene) (P3HT)/MoOx/Ag, where SnO2 and P3HT layers are used as the hole-and electron-blocking layers, respectively, successful realization of the selective hole trap and the resulting band bending/electron injection at the anode interface is demonstrated. As a result, a high EQE of similar to 16,000%, responsivity of similar to 50 A W-1, and specific detectivity of over 1012 Jones at -3 V are demonstrated. The origin of the suggested PM mechanism is discussed using photophysical and optoelectronic measurements and theoretical studies. This work ensures the successful demonstration of PM-type photodetectors using lead-free Cs2AgBiBr6 DP through strategic trap engineering. | - |
dc.identifier.bibliographicCitation | CHEMISTRY OF MATERIALS, v.35, no.8, pp.3095 - 3104 | - |
dc.identifier.doi | 10.1021/acs.chemmater.2c03271 | - |
dc.identifier.issn | 0897-4756 | - |
dc.identifier.scopusid | 2-s2.0-85152206664 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64256 | - |
dc.identifier.wosid | 000967528300001 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Stoichiometric Engineering of Cs2AgBiBr6 for Photomultiplication- Type Photodetectors | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | HALIDE DOUBLE PEROVSKITE | - |
dc.subject.keywordPlus | POLYMER PHOTODETECTORS | - |
dc.subject.keywordPlus | SPECTRAL RESPONSE | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | NARROW-BAND | - |
dc.subject.keywordPlus | HIGH-GAIN | - |
dc.subject.keywordPlus | UV | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | EMISSION | - |
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