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DC Field | Value | Language |
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dc.citation.endPage | 186 | - |
dc.citation.number | 1-2 | - |
dc.citation.startPage | 177 | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 415 | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Im, Se-Joon | - |
dc.contributor.author | Kim, Ki-Bum | - |
dc.date.accessioned | 2023-12-22T11:37:10Z | - |
dc.date.available | 2023-12-22T11:37:10Z | - |
dc.date.created | 2023-01-20 | - |
dc.date.issued | 2002-08 | - |
dc.description.abstract | TaN or TaCN films were deposited using a single source, pentakis-diethylamido-tantalum as diffusion barrier for copper metallization. N- and Ar-ion beams with energy of 120 eV were used for bombarding the film during growth to improve the film quality. The films deposited using N-ion beam showed a resistivity of approximately 950 muOhm cm and a density of 7.65 g/cm(3). The use of the N-ion beam, however, drastically degraded the step coverage of the film (similar to5% at the 0.5 mum contact holes with aspect ratio of 3:1). On the other hand, the films deposited using an Ar-ion beam showed a resistivity of approximately 600 muOhm cm and a density of 8.26 g/cm(3). The step coverage measured at the same contact was approximately 40%. The resistivity and density of the thermally-decomposed film were also measured for comparison and were found to be approximately 10 000 muOhm cm and 5.85 g/cm(3), respectively. Finally, the diffusion barrier performance of 50 nm thick films against Cu was investigated by X-ray diffractometry. The Cu/N- or Ar-ion beam bombarded film/Si structures showed formation of eta"-Cu3Si after annealing at 650 degreesC for I h, while Cu/thermally-decomposed film/Si showed this only after annealing at 600 degreesC. (C) 2002 Elsevier Science B.V. All rights reserved. | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.415, no.1-2, pp.177 - 186 | - |
dc.identifier.doi | 10.1016/S0040-6090(02)00505-9 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.scopusid | 2-s2.0-0036671496 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64181 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0040609002005059?via%3Dihub | - |
dc.identifier.wosid | 000178198000027 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | The effect of ion beam bombardment on the properties of Ta(C)N films deposited from pentakis-diethylamido-tantalum | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | chemical vapor deposition | - |
dc.subject.keywordAuthor | ion bombardment | - |
dc.subject.keywordAuthor | TaCN | - |
dc.subject.keywordAuthor | TaN | - |
dc.subject.keywordAuthor | copper metallization | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | DIFFUSION BARRIER PROPERTY | - |
dc.subject.keywordPlus | LOW-TEMPERATURE DEPOSITION | - |
dc.subject.keywordPlus | CU METALLIZATION | - |
dc.subject.keywordPlus | TITANIUM NITRIDE | - |
dc.subject.keywordPlus | COPPER DIFFUSION | - |
dc.subject.keywordPlus | TIN FILMS | - |
dc.subject.keywordPlus | THIN TA | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | MECHANISM | - |
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