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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 4488 | - |
dc.citation.number | 25 | - |
dc.citation.startPage | 4486 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 82 | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Oh, Su Suk | - |
dc.contributor.author | Kim, Ki Bum | - |
dc.contributor.author | Kang, Dae-Hwan | - |
dc.contributor.author | Li, Wei-Min | - |
dc.contributor.author | Haukka, Suvi | - |
dc.contributor.author | Tuominen, Marko | - |
dc.date.accessioned | 2023-12-22T11:11:02Z | - |
dc.date.available | 2023-12-22T11:11:02Z | - |
dc.date.created | 2023-01-26 | - |
dc.date.issued | 2003-06 | - |
dc.description.abstract | The properties of WNxCy films deposited by atomic layer deposition (ALD) using WF6, NH3, and triethyl boron as source gases were characterized as a diffusion barrier for copper metallization. It is noted that the as-deposited film shows an extremely low resistivity of about 350 muOmega cm with a film density of 15.37 g/cm(3). The film composition measured from Rutherford backscattering spectrometry shows W, C, and N of similar to48, 32, and 20 at. %, respectively. Transmission electron microscopy analyses show that the as-deposited film is composed of face-centered-cubic phase with a lattice parameter similar to both beta-WC1-x and beta-W2N with an equiaxed microstructure. The barrier property of this ALD-WNxCy film at a nominal thickness of 12 nm deposited between Cu and Si fails only after annealing at 700 degreesC for 30 min. (C) 2003 American Institute of Physics. | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.82, no.25, pp.4486 - 4488 | - |
dc.identifier.doi | 10.1063/1.1585111 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.scopusid | 2-s2.0-0038044822 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64179 | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.1585111 | - |
dc.identifier.wosid | 000183557300026 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Atomic-layer-deposited WNxCy thin films as diffusion barrier for copper metallization | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | EPITAXY GROWTH | - |
dc.subject.keywordPlus | TIN | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | TAN | - |
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