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DC Field | Value | Language |
---|---|---|
dc.citation.number | 22 | - |
dc.citation.startPage | 221919 | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 86 | - |
dc.contributor.author | Sun, Ho-Jung | - |
dc.contributor.author | Lee, Young-Jin | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Lee, Joo-Wan | - |
dc.contributor.author | Ku, Ja-Chun | - |
dc.contributor.author | Sohn, Hyun-Chul | - |
dc.contributor.author | Kim, Jin-Woong | - |
dc.contributor.author | Kim, Uisik | - |
dc.contributor.author | Sung, Nak-Kyun | - |
dc.date.accessioned | 2023-12-22T10:36:30Z | - |
dc.date.available | 2023-12-22T10:36:30Z | - |
dc.date.created | 2023-01-30 | - |
dc.date.issued | 2005-05 | - |
dc.description.abstract | The behavior of cobalt silicidation was investigated in a 45-nm-wide contact opening on (100) silicon substrate. A Co film was deposited using sputtering techniques with elongated target-to-wafer spacing and a CoSi2 phase was developed after being annealed using rapid thermal processing at 750 degrees C for 30 s. It was revealed that the CoSi2 was grown epitaxially both on {111} and (100) Si at the same time, resulting in a faceted single crystal. Type A epitaxy on {111} Si was developed due to the coepitaxial growth. It was suggested that the tendency for the epitaxial growth of CoSi2 was strong in such a highly confined contact opening. (c) 2005 American Institute of Physics. | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.86, no.22, pp.221919 | - |
dc.identifier.doi | 10.1063/1.1943500 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.scopusid | 2-s2.0-20844462534 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64175 | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.1943500 | - |
dc.identifier.wosid | 000229590100031 | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Epitaxial growth of CoSi2 in a decanano contact opening on a (100) silicon substrate | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | SILICIDES | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | SI | - |
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