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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | C57 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | C54 | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 9 | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Kim, JK | - |
dc.contributor.author | Kwak, N | - |
dc.contributor.author | Sohn, H | - |
dc.contributor.author | Kim, J | - |
dc.contributor.author | Jung, SH | - |
dc.contributor.author | Hong, MR | - |
dc.contributor.author | Lee, SH | - |
dc.contributor.author | Collins, J | - |
dc.date.accessioned | 2023-12-22T10:08:37Z | - |
dc.date.available | 2023-12-22T10:08:37Z | - |
dc.date.created | 2023-01-20 | - |
dc.date.issued | 2006-01 | - |
dc.description.abstract | Tungsten nitride thin films were grown by atomic layer deposition using alternating exposures of B2H6, WF6, and NH3 at 300 S C. The film thickness linearly increased with the number of the reaction cycles and the determined growth rate was similar to 0.28 nm/cycle with B2H6, WF6, and NH3 at pulsing times of 5, 0.25, and 2 s, respectively. The film had a resisitivity of similar to 350 mu Omega cm with a metallic W-N bond and density of similar to 15 g/cm(3) at the thickness of 10 nm. X-ray diffractometry analysis showed that the film had nanocrystalline grains with beta-W2N and delta-WN phase. Step coverage was approximately 100% even on the 0.14 mu m diameter contact hole with a 16:1 aspect ratio. (c) 2006 The Electrochemical Society. | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.9, no.3, pp.C54 - C57 | - |
dc.identifier.doi | 10.1149/1.2161451 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.scopusid | 2-s2.0-31044432920 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64174 | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.2161451 | - |
dc.identifier.wosid | 000235479500024 | - |
dc.language | 영어 | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Atomic layer deposition of low-resistivity and high-density tungsten nitride thin films using B2H6, WF6, and NH3 | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Electrochemistry; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | DIFFUSION BARRIER | - |
dc.subject.keywordPlus | COPPER METALLIZATION | - |
dc.subject.keywordPlus | CU METALLIZATION | - |
dc.subject.keywordPlus | TIN | - |
dc.subject.keywordPlus | SURFACE | - |
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