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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | H83 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | H80 | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 12 | - |
dc.contributor.author | Kim, Choon-Hwan | - |
dc.contributor.author | Rho, Il-Cheol | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Sohn, Yong-Sun | - |
dc.contributor.author | Kang, Hyo-Sang | - |
dc.contributor.author | Kim, Hyeong-Joon | - |
dc.date.accessioned | 2023-12-22T08:42:26Z | - |
dc.date.available | 2023-12-22T08:42:26Z | - |
dc.date.created | 2023-01-20 | - |
dc.date.issued | 2008-03 | - |
dc.description.abstract | The resistivity of chemical-vapor-deposited (CVD)-W film was reported to be significantly reduced using a B2H6-based atomic layer deposited (ALD)-W nucleation layer for continuously shrinking memory devices. But, we found that the adhesion performances of CVD-W films growing on the B2H6-based ALD-W nucleation layer were poor compared to those on the SiH4-based W nucleation layer. Scanning electron microscopy and secondary ion mass spectrometry analysis clearly suggest that the boron penetration into the interface between underlying TiN and SiO2 during the deposition of W nucleation layer is a possible reason to degrade the adhesion performances of CVD-W films with B2H6-based W nucleation layers. By rigorous selection of both the deposition conditions for W nucleation layer and diffusion barrier materials, we can demonstrate the successful deposition of CVD-W film with a very low resistivity of similar to 12 mu Omega cm (50 nm in thickness) without an adhesion failure. Noticeably, the application of 5 nm thick sputter-deposited WNx film as a glue layer was found to present an excellent adhesion performance, which was due to its excellent diffusion barrier performance with amorphous structure. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3056376] All rights reserved. | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.3, pp.H80 - H83 | - |
dc.identifier.doi | 10.1149/1.3056376 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.scopusid | 2-s2.0-58149481901 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64168 | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.2890092 | - |
dc.identifier.wosid | 000263154000028 | - |
dc.language | 영어 | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Improvement of Adhesion Performances of CVD-W Films Deposited on B2H6-Based ALD-W Nucleation Layer | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Electrochemistry; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | B2H6 | - |
dc.subject.keywordPlus | DIBORANE | - |
dc.subject.keywordPlus | TUNGSTEN | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | PHASE | - |
dc.subject.keywordPlus | WF6 | - |
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