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DC Field | Value | Language |
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dc.citation.endPage | H594 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | H589 | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 155 | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Kim, Hyun Tae | - |
dc.contributor.author | Yim, Sung-Soo | - |
dc.contributor.author | Lee, Do-Joong | - |
dc.contributor.author | Kim, Ki-Su | - |
dc.contributor.author | Kim, Hyun-Mi | - |
dc.contributor.author | Kim, Ki-Bum | - |
dc.contributor.author | Sohn, Hyunchul | - |
dc.date.accessioned | 2023-12-22T08:38:46Z | - |
dc.date.available | 2023-12-22T08:38:46Z | - |
dc.date.created | 2023-01-20 | - |
dc.date.issued | 2008-06 | - |
dc.description.abstract | Diffusion barrier performances of atomic layer deposited (ALD)-Ru thin films between Cu and Si were improved with the use of an underlying 2 nm thick ALD-TaCN interlayer as diffusion barrier for the direct plating of Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)(2)] and NH(3) plasma and TaCN by a sequential supply of (NEt(2))(3)Ta=Nbu(t) (tert-butylimido-trisdiethylamido-tantalum), and H(2) plasma. Sheet resistance measurements, X-ray diffractometry, and Auger electron spectroscopy analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4 nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and 550 degrees C for 30 min, respectively. This is because of the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to its amorphous structure. A 5 nm thick ALD-TaCN film was even stable up to annealing at 650 degrees C between Cu and Si. Transmission electron microscopy investigation, combined with energy-dispersive spectroscopy analysis, revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si. (C) 2008 The Electrochemical Society. | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.8, pp.H589 - H594 | - |
dc.identifier.doi | 10.1149/1.2940447 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.scopusid | 2-s2.0-46649085712 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64167 | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.2940447 | - |
dc.identifier.wosid | 000257421600052 | - |
dc.language | 영어 | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | A bilayer diffusion barrier of ALD-Ru/ALD-TaCN for direct plating of Cu | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry; Materials Science, Coatings & Films | - |
dc.relation.journalResearchArea | Electrochemistry; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | COPPER | - |
dc.subject.keywordPlus | METALLIZATION | - |
dc.subject.keywordPlus | RUTHENIUM | - |
dc.subject.keywordPlus | ELECTRODEPOSITION | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | SILICIDE | - |
dc.subject.keywordPlus | TANTALUM | - |
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