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DC Field | Value | Language |
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dc.citation.endPage | H251 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | H248 | - |
dc.citation.title | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.citation.volume | 12 | - |
dc.contributor.author | Sari, Windu | - |
dc.contributor.author | Eom, Tae-Kwang | - |
dc.contributor.author | Jeon, Chan-Wook | - |
dc.contributor.author | Sohn, Hyunchul | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.date.accessioned | 2023-12-22T08:07:05Z | - |
dc.date.available | 2023-12-22T08:07:05Z | - |
dc.date.created | 2023-01-20 | - |
dc.date.issued | 2009-04 | - |
dc.description.abstract | A sputter-prepared Ru (7 nm)/WNx (8 nm) stacked layer was investigated as a diffusion barrier layer between Cu and Si for direct-plateable Cu interconnects, and its performance was compared with that of a Ru single layer with the same thickness (15 nm). X-ray diffractometry and sheet resistance measurements showed that the incorporation of WNx into the Ru single layer system significantly improved the barrier performance against Cu diffusion. The Ru/WNx bilayer barrier stack failed due to Cu diffusion attack after annealing at 750 degrees C for 30 min, while the Ru single layer failed after annealing at 450 degrees C by the formation of Cu silicide (eta(')-Cu3Si). A high resolution transmission electron microscopy analysis clearly suggested that this was due to the excellent diffusion barrier performance of WNx film with a nanocrystalline structure embedded in an amorphous matrix. | - |
dc.identifier.bibliographicCitation | ELECTROCHEMICAL AND SOLID STATE LETTERS, v.12, no.7, pp.H248 - H251 | - |
dc.identifier.doi | 10.1149/1.3117242 | - |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.scopusid | 2-s2.0-69149109170 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64166 | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.3117242 | - |
dc.identifier.wosid | 000266207100022 | - |
dc.language | 영어 | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Improvement of the Diffusion Barrier Performance of Ru by Incorporating a WNx Thin Film for Direct-Plateable Cu Interconnects | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Electrochemistry; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | X-ray diffraction | - |
dc.subject.keywordAuthor | annealing | - |
dc.subject.keywordAuthor | copper | - |
dc.subject.keywordAuthor | diffusion barriers | - |
dc.subject.keywordAuthor | electrical resistivity | - |
dc.subject.keywordAuthor | elemental semiconductors | - |
dc.subject.keywordAuthor | metallic thin films | - |
dc.subject.keywordAuthor | MIS structures | - |
dc.subject.keywordAuthor | nanostructured materials | - |
dc.subject.keywordAuthor | ruthenium | - |
dc.subject.keywordAuthor | semiconductor-metal boundaries | - |
dc.subject.keywordAuthor | silicon | - |
dc.subject.keywordAuthor | transmission electron microscopy | - |
dc.subject.keywordAuthor | tungsten compounds | - |
dc.subject.keywordPlus | RUTHENIUM | - |
dc.subject.keywordPlus | METALLIZATION | - |
dc.subject.keywordPlus | TA | - |
dc.subject.keywordPlus | DIRECT COPPER ELECTRODEPOSITION | - |
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