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DC Field | Value | Language |
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dc.citation.endPage | H689 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | H685 | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 156 | - |
dc.contributor.author | Kim, Choon-Hwan | - |
dc.contributor.author | Rho, Il-Cheol | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Han, Il-Keoun | - |
dc.contributor.author | Kang, Hyo-Sang | - |
dc.contributor.author | Ryu, Seung-Wook | - |
dc.contributor.author | Kim, Hyeong-Joon | - |
dc.date.accessioned | 2023-12-22T07:44:47Z | - |
dc.date.available | 2023-12-22T07:44:47Z | - |
dc.date.created | 2023-01-20 | - |
dc.date.issued | 2009-06 | - |
dc.description.abstract | Tungsten (W) thin films were deposited using the modified chemical vapor deposition (CVD), the so-called pulsed CVD, and their properties were characterized as nucleation layers for the chemical vapor deposited W (CVD-W) technology of sub-50 nm memory devices. W growth per cycle was extremely linear with a higher growth rate of similar to 0.58 nm/cycle as compared to that (similar to 0.28 nm/cycle) of the atomic layer deposition (ALD) process using the same chemistry. From the X-ray diffractometry, the pulsed CVD-W film was formed as an amorphous structure, which was the same as the atomic layer deposited W. This led to the formation of a low resistivity bulk CVD-W film deposited on it with the grain size of similar to 180 nm at 200 nm thick film, and its resistivity was further decreased with the B2H6 post-treatment before the deposition of bulk CVD-W film (similar to 13 mu cm at a 50 nm thick film). However, we found that the adhesion performances of CVD-W growing on the B2H6-based pulsed CVD-W nucleation layer were significantly degraded as both the deposition temperature of the nucleation layer and the B2H6 post-treatment time increased. High resolution transmission electron microscopy and energy-dispersive spectroscopy analysis clearly demonstrated that a discontinuous boron layer was formed at the bulk CVD-W/nucleation layer interface, which was dominantly due to the B2H6 decomposition during the B2H6 post-treatment. We strongly suggest that a boron-containing discontinuous layer degrades the adhesion properties of CVD-W films growing on it. Considering the thermodynamics of the B2H6 decomposition, we can improve the adhesion properties by increasing the H-2 flow rate at the post-treatment step. | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.9, pp.H685 - H689 | - |
dc.identifier.doi | 10.1149/1.3155430 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.scopusid | 2-s2.0-68049147158 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64165 | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.2815962 | - |
dc.identifier.wosid | 000268405400047 | - |
dc.language | 영어 | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Pulsed CVD-W Nucleation Layer Using WF6 and B2H6 for Low Resistivity W | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry; Materials Science, Coatings & Films | - |
dc.relation.journalResearchArea | Electrochemistry; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | adhesion | - |
dc.subject.keywordAuthor | amorphous state | - |
dc.subject.keywordAuthor | chemical vapour deposition | - |
dc.subject.keywordAuthor | electrical resistivity | - |
dc.subject.keywordAuthor | grain size | - |
dc.subject.keywordAuthor | metallic thin films | - |
dc.subject.keywordAuthor | nucleation | - |
dc.subject.keywordAuthor | transmission electron microscopy | - |
dc.subject.keywordAuthor | tungsten | - |
dc.subject.keywordAuthor | X-ray chemical analysis | - |
dc.subject.keywordAuthor | X-ray diffraction | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | TUNGSTEN THIN-FILMS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | PLUG | - |
dc.subject.keywordPlus | ALD | - |
dc.subject.keywordPlus | DIBORANE | - |
dc.subject.keywordPlus | SURFACES | - |
dc.subject.keywordPlus | PHASE | - |
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