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Kim, Soo-Hyun
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Structural and Electrical Properties of Atomic Layer Deposited Al-Doped ZnO Films

Author(s)
Lee, Do-JoongKim, Hyun-MiKwon, Jang-YeonChoi, HyojiKim, Soo-HyunKim, Ki-Bum
Issued Date
2011-02
DOI
10.1002/adfm.201001342
URI
https://scholarworks.unist.ac.kr/handle/201301/64159
Fulltext
http://dx.doi.org/10.1002/adfm.201001342
Citation
ADVANCED FUNCTIONAL MATERIALS, v.21, no.3, pp.448 - 455
Abstract
Structural and electrical properties of Al-doped ZnO (AZO) films deposited by atomic layer deposition (ALD) are investigated to study the extrinsic doping mechanism of a transparent conducting oxide. ALD-AZO films exhibit a unique layer-by-layer structure consisting of a ZnO matrix and Al2O3 dopant layers, as determined by transmission electron microscopy analysis. In these layered AZO films, a single Al2O3 dopant layer deposited during one ALD cycle could provide approximate to 4.5 x 10(13) cm(-2) free electrons to the ZnO. The effective field model for doping is suggested to explain the decrease in the carrier concentration of ALD-AZO films when the interval between the Al2O3 layers is reduced to less than approximate to 2.6 nm (>3.4 at% Al). By correlating the electrical and structural properties, an extrinsic doping mechanism of ALD-AZO films is proposed in which the incorporated Al atoms take oxygen from the ZnO matrix and form doubly charged donors, such as oxygen vacancies or zinc interstitials.
Publisher
WILEY-V C H VERLAG GMBH
ISSN
1616-301X
Keyword
OXIDE THIN-FILMSPULSED-LASER DEPOSITIONTRANSPARENT CONDUCTING OXIDESCHEMICAL-VAPOR-DEPOSITIONSENSITIZED SOLAR-CELLSINDIUM-OXIDEOPTICAL-PROPERTIESSPRAY-PYROLYSISMAGNETIC-FIELDGROWTH

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