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DC Field | Value | Language |
---|---|---|
dc.citation.number | 5 | - |
dc.citation.startPage | 05EA08 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 50 | - |
dc.contributor.author | Sari, Windu | - |
dc.contributor.author | Eom, Tae-Kwang | - |
dc.contributor.author | Choi, Sang-Hyeok | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.date.accessioned | 2023-12-22T06:09:53Z | - |
dc.date.available | 2023-12-22T06:09:53Z | - |
dc.date.created | 2023-01-20 | - |
dc.date.issued | 2011-05 | - |
dc.description.abstract | Bilayers of Ru (7 nm)/WNx (8 nm) prepared by sputtering were investigated as diffusion barriers between Cu and Si, and their performances were compared as a function of N-2 flow rate during the deposition of WNx. The Ru/WNx bilayer diffusion barriers were stable upon annealing at up to at least 650 degrees C for 30 min while a Ru single layer (15nm in thickness) failed after annealing at 450 degrees C owing to the formation of Cu silicide. Grazing-angle X-ray diffractometry results showed that the crystallinity of the WNx film was degraded but that its nanocrystalline state preserved upon annealing at higher temperatures with increasing N-2 flow rate during the deposition. These resulted in the better performance against Cu attack of bilayer diffusion barriers with the WNx film prepared with a higher N-2 flow rate. (C) 2011 The Japan Society of Applied Physics | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.5, pp.05EA08 | - |
dc.identifier.doi | 10.1143/JJAP.50.05EA08 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.scopusid | 2-s2.0-79957440317 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64154 | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.50.05EA08 | - |
dc.identifier.wosid | 000290787900008 | - |
dc.language | 영어 | - |
dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
dc.title | Ru/WNx Bilayers as Diffusion Barriers for Cu Interconnects | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | RUTHENIUM THIN-FILM | - |
dc.subject.keywordPlus | COPPER | - |
dc.subject.keywordPlus | RU | - |
dc.subject.keywordPlus | ELECTRODEPOSITION | - |
dc.subject.keywordPlus | METALLIZATION | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | IMPROVEMENT | - |
dc.subject.keywordPlus | WNX | - |
dc.subject.keywordPlus | TA | - |
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