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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | H1182 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | H1179 | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 158 | - |
dc.contributor.author | Yoon, Jaehong | - |
dc.contributor.author | Lee, Han-Bo-Ram | - |
dc.contributor.author | Kim, Doyoung | - |
dc.contributor.author | Cheon, Taehoon | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Kim, Hyungjun | - |
dc.date.accessioned | 2023-12-22T05:42:07Z | - |
dc.date.available | 2023-12-22T05:42:07Z | - |
dc.date.created | 2023-01-30 | - |
dc.date.issued | 2011-10 | - |
dc.description.abstract | Cobalt thin films were deposited by plasma-enhanced atomic layer deposition (PE-ALD) using CoCp2 as a precursor and N-2/H-2 plasma as a reactant. We systematically investigated the changes in Co film properties depending on N-2/H-2 gas flow ratio to study the role of N during PE-ALD Co. With increasing N-2 flow ratio, the resistivity decreased reaching minimum value at fN(2)/H-2 = 0.25 similar to 0.33, which corresponds to the atomic ratio in NH3 molecule, and then increased. With only N-2 or H-2 plasma, films with very high sheet resistance over 1 M/sq were deposited. The chemical compositions of Co films were analyzed by x-ray photoelectron spectroscopy (XPS) and thickness and conformality were determined by x-ray reflectometry (XRR) and field emission scanning electron microscopy (FE-SEM), respectively. Then, the silicidation of PE-ALD Co films producing epitaxial CoSi2 were investigated by x-ray diffraction (XRD) and high-resolution cross-sectional transmission electron microscopy (HR-XTEM). (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.077111jes] All rights reserved. | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.11, pp.H1179 - H1182 | - |
dc.identifier.doi | 10.1149/2.077111jes | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.scopusid | 2-s2.0-80054031048 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64150 | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/2.077111jes | - |
dc.identifier.wosid | 000295626000066 | - |
dc.language | 영어 | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Atomic Layer Deposition of Co Using N-2/H-2 Plasma as a Reactant | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry; Materials Science, Coatings & Films | - |
dc.relation.journalResearchArea | Electrochemistry; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | MEDIATED EPITAXY | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | COSI2 | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordPlus | METAL | - |
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