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DC Field | Value | Language |
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dc.citation.endPage | 11340 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 11333 | - |
dc.citation.title | ACS NANO | - |
dc.citation.volume | 7 | - |
dc.contributor.author | Song, Jeong-Gyu | - |
dc.contributor.author | Park, Jusang | - |
dc.contributor.author | Lee, Wonseon | - |
dc.contributor.author | Choi, Taejin | - |
dc.contributor.author | Jung, Hanearl | - |
dc.contributor.author | Lee, Chang Wan | - |
dc.contributor.author | Hwang, Sung-Hwan | - |
dc.contributor.author | Myoung, Jae Min | - |
dc.contributor.author | Jung, Jae-Hoon | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Lansalot-Matras, Clement | - |
dc.contributor.author | Kim, Hyungjun | - |
dc.date.accessioned | 2023-12-22T03:09:47Z | - |
dc.date.available | 2023-12-22T03:09:47Z | - |
dc.date.created | 2022-12-26 | - |
dc.date.issued | 2013-12 | - |
dc.description.abstract | The synthesis of atomically thin transition-metal disulfides (MS2) with layer controllability and large-area uniformity is an essential requirement for their application in electronic and optical devices. In this work, we describe a process for the synthesis of WS2 nanosheets through the sulfurization of an atomic layer deposition (AID) WO, film with systematic layer controllability and wafer-level uniformity. The X-ray photoemission spectroscopy, Raman, and photoluminescence measurements exhibit that the AID-based WS2 nanosheets have good stoichiometry, clear Raman shift, and bandgap dependence as a function of the number of layers. The electron mobility of the monolayer WS2 measured using a field-effect transistor (FET) with a high-k dielectric gate insulator is shown to be better than that of CVD-grown WS2, and the subthreshold swing is comparable to that of an exfoliated MoS2 FET device. Moreover, by utilizing the high conformality of the AID process, we have developed a process for the fabrication of WS2 nanotubes. | - |
dc.identifier.bibliographicCitation | ACS NANO, v.7, no.12, pp.11333 - 11340 | - |
dc.identifier.doi | 10.1021/nn405194e | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.scopusid | 2-s2.0-84891359914 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64141 | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/nn405194e | - |
dc.identifier.wosid | 000329137100098 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | WS2 | - |
dc.subject.keywordAuthor | transition-metal dichalcogenides | - |
dc.subject.keywordAuthor | two-dimensional materials | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | WS2 nanotube | - |
dc.subject.keywordPlus | HIGH-QUALITY MONOLAYER | - |
dc.subject.keywordPlus | MOS2 THIN-LAYERS | - |
dc.subject.keywordPlus | SINGLE-LAYER | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | VALLEY POLARIZATION | - |
dc.subject.keywordPlus | INTEGRATED-CIRCUITS | - |
dc.subject.keywordPlus | WS2 NANOTUBES | - |
dc.subject.keywordPlus | BILAYER | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
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