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DC Field | Value | Language |
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dc.citation.endPage | 415 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 408 | - |
dc.citation.title | JOURNAL OF PHYSICAL CHEMISTRY C | - |
dc.citation.volume | 118 | - |
dc.contributor.author | Lee, Do-Joong | - |
dc.contributor.author | Kwon, Jang-Yeon | - |
dc.contributor.author | Kim, Jiyeon | - |
dc.contributor.author | Kim, Ki-Ju | - |
dc.contributor.author | Cho, Yeong-Ho | - |
dc.contributor.author | Cho, Seong-Yong | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Xu, Jimmy | - |
dc.contributor.author | Kim, Ki-Bum | - |
dc.date.accessioned | 2023-12-22T03:07:26Z | - |
dc.date.available | 2023-12-22T03:07:26Z | - |
dc.date.created | 2022-12-26 | - |
dc.date.issued | 2014-01 | - |
dc.description.abstract | Ultrasmooth and highly conductive amorphous In-Zn-O (a-IZO) films are grown by atomic layer deposition (ALD). This opens a new pathway to highly transparent and conductive oxides with an extreme conformality. In this process, a-IZO films of various compositions are deposited by alternate stacking of ZnO and In2O3 atomic-layers at a temperature of 200 degrees C. The IZO films have an amorphous phase over a wide composition range, 43.2-91.5 at %, of In cation ratio. The In-rich a-IZO film (83.2 at % In) exhibits a very low resistivity of 3.9 x 10(-4) Omega cm and extremely high electron mobility in excess of 50 cm(2) V-1 s(-1), one of the highest among the reported ALD-grown transparent conducting oxides. Moreover, it exhibits an ultrasmooth surface (similar to 0.2 nm in root-mean-square roughness), and can be conformally coated onto nanotrench structures (inlet size: 25 nm) with excellent step coverage of 96%. | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICAL CHEMISTRY C, v.118, no.1, pp.408 - 415 | - |
dc.identifier.doi | 10.1021/jp409738f | - |
dc.identifier.issn | 1932-7447 | - |
dc.identifier.scopusid | 2-s2.0-84892584169 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64139 | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/jp409738f | - |
dc.identifier.wosid | 000329678200045 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Ultrasmooth, High Electron Mobility Amorphous In-Zn-O Films Grown by Atomic Layer Deposition | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | OXIDE THIN-FILMS | - |
dc.subject.keywordPlus | TRANSPARENT CONDUCTING OXIDES | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | ZINC-OXIDE | - |
dc.subject.keywordPlus | CARRIER TRANSPORT | - |
dc.subject.keywordPlus | INDIUM | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | IN2O3 | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | PARAMETERS | - |
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