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DC Field | Value | Language |
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dc.citation.endPage | 2769 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 2764 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 6 | - |
dc.contributor.author | Jung, Hanearl | - |
dc.contributor.author | Park, Jusang | - |
dc.contributor.author | Oh, Il-Kwon | - |
dc.contributor.author | Choi, Taejin | - |
dc.contributor.author | Lee, Sanggeun | - |
dc.contributor.author | Hong, Juree | - |
dc.contributor.author | Lee, Taeyoon | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Kim, Hyungjun | - |
dc.date.accessioned | 2023-12-22T03:06:20Z | - |
dc.date.available | 2023-12-22T03:06:20Z | - |
dc.date.created | 2023-01-18 | - |
dc.date.issued | 2014-02 | - |
dc.description.abstract | Without introducing defects in the monolayer of carbon lattice, the deposition of high-kappa dielectric material is a significant challenge because of the difficulty of high-quality oxide nucleation on graphene. Previous investigations of the deposition of high-kappa dielectrics on graphene have often reported significant degradation of the electrical properties of graphene. In this study, we report a new way to integrate high-kappa dielectrics with graphene by transferring a high-kappa dielectric nanosheet onto graphene. Al2O3 film was deposited on a sacrificial layer using an atomic layer deposition process and the Al2O3 nanosheet was fabricated by removing the sacrificial layer. Top-gated graphene field-effect transistors were fabricated and characterized using the Al2O3 nanosheet as a gate dielectric. The top-gated graphene was demonstrated to have a field-effect mobility up to 2200 cm(2)/(V s). This method provides a new method for high-performance graphene devices with broad potential impacts reaching from high-frequency high-speed circuits to flexible electronics. | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.6, no.4, pp.2764 - 2769 | - |
dc.identifier.doi | 10.1021/am4052987 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.scopusid | 2-s2.0-84896806173 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64137 | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/am4052987 | - |
dc.identifier.wosid | 000332144600074 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Fabrication of Transferable Al2O3 Nanosheet by Atomic Layer Deposition for Graphene FET | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | gate dielectric | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | Al2O3 | - |
dc.subject.keywordAuthor | nanosheet | - |
dc.subject.keywordAuthor | top-gated field effect transistor | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | FILMS | - |
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