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DC Field | Value | Language |
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dc.citation.endPage | 1556 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1548 | - |
dc.citation.title | JOURNAL OF PHYSICAL CHEMISTRY C | - |
dc.citation.volume | 119 | - |
dc.contributor.author | Hong, Tae Eun | - |
dc.contributor.author | Jung, Jae-Hun | - |
dc.contributor.author | Yeo, Seungmin | - |
dc.contributor.author | Cheon, Taehoon | - |
dc.contributor.author | Bae, So Ik | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.contributor.author | Yeo, So Jeong | - |
dc.contributor.author | Kim, Hyo-Suk | - |
dc.contributor.author | Chung, Taek-Mo | - |
dc.contributor.author | Park, Bo Keun | - |
dc.contributor.author | Kim, Chang Gyoun | - |
dc.contributor.author | Lee, Do-Joong | - |
dc.date.accessioned | 2023-12-22T01:41:29Z | - |
dc.date.available | 2023-12-22T01:41:29Z | - |
dc.date.created | 2023-01-18 | - |
dc.date.issued | 2015-01 | - |
dc.description.abstract | Ternary and amorphous tungsten silicon nitride (W-Si-N) thin films were grown by atomic layer deposition (ALD) using a sequential supply of a new fluorine-free, silylamide-based W metallorganic precursor, bis(tert-butylimido)bis(bis(trimethylsilylamido))tungsten(VI) [W(NtBu)(2){N(SiMe3)(2)}(2)], and H-2 plasma at a substrate temperature of 300 degrees C. Here, W(NtBu)(2){N(SiMe3)(2)}(2) was prepared through a metathesis reaction of W(NtBu)(2)Cl-2(py)(2) (py = pyridine) with 2 equiv of LiN(SiMe3)2 [Li(btsa)]. The newly proposed ALD system exhibited typical ALD characteristics, such as self-limited film growth and linear dependency of the film growth on the number of ALD cycles, and showed a high growth rate of 0.072 nm/cycle on a thermally grown SiO2 substrate with a nearly zero incubation cycle. Such ideal ALD growth characteristics enabled excellent step coverage of ALD-grown W-Si-N film, similar to 100%, onto nanotrenches with a width of 25 nm and an aspect ratio similar to 4.5. Rutherford backscattering spectrometry and X-ray photoelectron spectroscopy analysis confirmed that the incorporated Si and W were mostly bonded to N, as in Si-N and W-N chemical bonds. The film kept its amorphous nature until annealing at 800 degrees C, and crystallization happened at local areas after annealing at a very high temperature of 900 degrees C. An ultrathin (only similar to 4 nm thick) ALD-grown W-Si-N film effectively prevented diffusion of Cu into Si after annealing at a temperature up to 600 degrees C. | - |
dc.identifier.bibliographicCitation | JOURNAL OF PHYSICAL CHEMISTRY C, v.119, no.3, pp.1548 - 1556 | - |
dc.identifier.doi | 10.1021/jp510226g | - |
dc.identifier.issn | 1932-7447 | - |
dc.identifier.scopusid | 2-s2.0-84921468364 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64125 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0167931715000787?via%3Dihub | - |
dc.identifier.wosid | 000348491900033 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Highly Conformal Amorphous W-Si-N Thin Films by Plasma-Enhanced Atomic Layer Deposition as a Diffusion Barrier for Cu Metallization | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | STRUCTURAL-PROPERTIES | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | WF6 | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | WNXCY | - |
dc.subject.keywordPlus | B2H6 | - |
dc.subject.keywordPlus | TI | - |
dc.subject.keywordPlus | PRECURSOR | - |
dc.subject.keywordPlus | RATIO | - |
dc.subject.keywordPlus | ALD | - |
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