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DC Field | Value | Language |
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dc.citation.endPage | 22 | - |
dc.citation.startPage | 16 | - |
dc.citation.title | MICROELECTRONIC ENGINEERING | - |
dc.citation.volume | 137 | - |
dc.contributor.author | Yeo, Seungmin | - |
dc.contributor.author | Park, Ji-Yoon | - |
dc.contributor.author | Lee, Seung-Joon | - |
dc.contributor.author | Lee, Do-Joong | - |
dc.contributor.author | Seo, Jong Hyun | - |
dc.contributor.author | Kim, Soo-Hyun | - |
dc.date.accessioned | 2023-12-22T01:17:12Z | - |
dc.date.available | 2023-12-22T01:17:12Z | - |
dc.date.created | 2023-01-18 | - |
dc.date.issued | 2015-04 | - |
dc.description.abstract | Ruthenium (Ru) and ruthenium dioxide (RuO2) thin films were grown by atomic layer deposition (ALD) by applying a sequential supply of a novel zero-valent metalorganic precursor, (ethylbenzene)(1,3-butadiene)Ru(0) (EBBDRu, C12H16Ru), and molecular oxygen (O-2) at a deposition temperature of 225 degrees C. EBBDRu provided a high vapor pressure of 1.2 Torr at 88 degrees C. In the case of Ru ALD, the growth per cycle (GPC) was similar to 0.06 nm/cycle starting with a slight incubation period of approximately 15 ALD cycles on a thermally grown silicon dioxide initial substrate. A metallic Ru film with high purity and low resistivity (similar to 26 mu Omega cm) was obtained at an ultra-thin thickness of similar to 10 nm. Furthermore, RuO2 thin films were grown controllably by increasing the O-2 pulsing time at a pure O-2 gas flow (with no nitrogen dilution) and at a deposition temperature of 225 degrees C. The GPC in the case of RuO2 ALD was similar to 0.09 nm/cycle and the number of incubation cycles was as low as 6 on a SiO2 starting substrate. Both the Ru and RuO2 thin films exhibited excellent step coverage of similar to 100% in very narrow trenches with 4.5 aspect ratio and a 25 nm top opening. (C) 2015 Elsevier B.V. All rights reserved. | - |
dc.identifier.bibliographicCitation | MICROELECTRONIC ENGINEERING, v.137, pp.16 - 22 | - |
dc.identifier.doi | 10.1016/j.mee.2015.02.026 | - |
dc.identifier.issn | 0167-9317 | - |
dc.identifier.scopusid | 2-s2.0-85027940677 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/64124 | - |
dc.identifier.url | https://linkinghub.elsevier.com/retrieve/pii/S0167931715000787 | - |
dc.identifier.wosid | 000355047500005 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER | - |
dc.title | Ruthenium and ruthenium dioxide thin films deposited by atomic layer deposition using a novel zero-valent metalorganic precursor, (ethylbenzene)(1,3-butadiene)Ru(0), and molecular oxygen | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics, Applied | - |
dc.relation.journalResearchArea | Engineering; Science & Technology - Other Topics; Optics; Physics | - |
dc.type.docType | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Ruthenium | - |
dc.subject.keywordAuthor | Ruthenium oxide | - |
dc.subject.keywordAuthor | Zero-valent metal-organic precursor | - |
dc.subject.keywordAuthor | Nucleation | - |
dc.subject.keywordPlus | THERMAL-STABILITY | - |
dc.subject.keywordPlus | RU | - |
dc.subject.keywordPlus | ELECTRODEPOSITION | - |
dc.subject.keywordPlus | NUCLEATION | - |
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